Abstract:The performance of strained silicon as the channel material for transistors has plateaued. Motivated by increasing charge-carrier mobility within the device channel to improve transistor performance, germanium (Ge) is considered as an attractive option as a silicon replacement due to its highest p-type mobility in all of the known semiconductor materials and being compatible with today's conventional CMOS manufacturing process. However, the intrinsically high carrier mobility of Ge becomes significantly degraded because Ge's native oxide is unstable and readily decomposes into several GexOy suboxides with a high density of dangling bonds at the surface. In addition, these interface trap states will also degrade the off-state leakage current and subthreshold turn-off of a Ge-based device, significantly affecting its stability. Furthermore, obtaining low-resistance Ohmic contacts to n-type Ge is another key challenge in developing Ge CMOS. To solve these challenges, extensive efforts have been made about the incorporation of new materials, such as Al2O3, SiN3, TiO2, ZnO, Ge3N4, MgO, HfO2, SrTiO3, and Y2O3, into Ge transistors. Controlling the diffusion of foreign atoms into Ge is therefore a critical issue in developing Ge transistors regarding that foreign impurities may be detrimental to devices. In this work, we study the diffusion properties of all common elements in Ge by performing the first-principle calculations with a nudged elastic band method. We find some large atoms, such as Cu, Au, Pd, etc., have a very small diffusion barrier. We reveal the underlying mechanism in a combination of local distortion induced by size effect and bonding effect that controls the diffusion behaviors of different atoms in Ge. This comprehensive study and relatively in-depth understanding of diffusion in Ge provides us with a practical guide for utilizing it more efficiently in semiconductor devices.

First-principles Calculations of High Thermal Conductivity in Germanium Carbide Channel Materials

First principles investigation of high thermal conductivity in hexagonal germanium carbide(2H-GeC)

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Silicon-Germanium Ultrashort-Gate Transistor Performances by Electrical-Thermal Simulations

Theoretical predicted high-thermal-conductivity cubic Si3N4 and Ge3N4: promising substrate materials for high-power electronic devices

Germanium Based Field-Effect Transistors: Challenges and Opportunities

Study of electronic, optical, thermodynamic, and thermoelectric properties of GeC bulk and monolayer structure

Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3-SiC Interfaces

Wafer-scale Heterogeneous Integration of Monocrystalline \b{eta}-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Multiphysics modeling and simulation of ultra-thin channel Germanium on insulator (GeOI) MOSFETs

Efficient Thermal Dissipation in Wafer-Scale Heterogeneous Integration of Single-Crystalline Β-Ga2o3 Thin Film on SiC

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

Opportunities and Challenges for Germanium and Silicon-Germanium Channel p-FETs

Structure and the Thermal Management of a 3-D Silicon Carbide MOSFET Module

High thermal conductivity in wafer-scale cubic silicon carbide crystals

Three-dimensional thermal analysis of heterogeneously integrated β -Ga2O3-on-SiC SBDs using Raman thermography and electrothermal modeling

Thermal Characterization of Silicon Carbide MOSFET Module Suitable for High-Temperature Computationally Efficient Thermal-Profile Prediction

Atomic mechanisms of fast diffusion of large atoms in Germanium

A Physics-Based Compact Electrothermal Model of Β-Ga2o3 MOSFETs for Device-Circuit Co-Design