Abstract:An efficient dendrite‐function‐like negative‐differential‐resistance (NDR) neuron is proposed for the first time. By co‐integrating electrochemicalrandom‐access memory (ECRAM) and ionic regulation, the non‐ideality of devicesis mitigated and it can also be trained to enhance neural network performancefor edge learning. Finally, the NDR neuron can work synergistically with 1T1R arrays to achieve full hardware implementation of neural networks. Computing‐in‐memory (CIM) architecture inspired by the hierarchy of human brain is proposed to resolve the von Neumann bottleneck and boost acceleration of artificial intelligence. Whereas remarkable progress has been achieved for CIM, making further improvements in CIM performance is becoming increasingly challenging, which is mainly caused by the disparity between rapid evolution of synaptic arrays and relatively slow progress in building efficient neuronal devices. Specifically, dedicated efforts are required toward developments of more advanced activation units in terms of both optimized algorithms and innovative hardware implementations. Here a novel bio‐inspired dendrite function‐like neuron based on negative‐differential‐resistance (NDR) behavior is reported and experimentally demonstrates this design as a more efficient neuron. By integrating electrochemical random‐access memory (ECRAM) with ionic regulation, the tunable NDR neuron can be trained to enhance neural network performances. Furthermore, based on a high‐density RRAM chip, fully hardware implementation of CIM is experimentally demonstrated by integrating NDR neuron devices with only a 1.03% accuracy loss. This work provides 516 × and 1.3 × 105 × improvements on LAE (Latency‐Area‐Energy) property, compared to the digital and analog CMOS activation circuits, respectively. With device‐algorithm co‐optimization, this work proposes a compact and energy‐efficient solution that pushes CIM‐based neuromorphic computing into a new paradigm.

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Latency Insertion Method for Accelerated Simulation of Memristor Crossbar Array in Neuromorphic Chip

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Tempo-CIM: A RRAM Compute-in-Memory Neuromorphic Accelerator with Area-Efficient LIF Neuron and Split-Train-Merged-Inference Algorithm for Edge AI Applications.

Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications

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A 2.75-to-75.9tops/w Computing-in-Memory NN Processor Supporting Set-Associate Block-Wise Zero Skipping and Ping-Pong CIM with Simultaneous Computation and Weight Updating.

MNSIM: Simulation Platform for Memristor-Based Neuromorphic Computing System.

NeuroSim V1.4: Extending Technology Support for Digital Compute-in-Memory Toward 1nm Node

An Edram Based Computing-in-Memory Macro with Full-Valid-Storage and Channel-Wise-Parallelism for Depthwise Neural Network

A 4-Bit Calibration-Free Computing-In-Memory Macro with 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell Edram

HiT-CIM: A High-Throughput Compute-In-Memory SRAM Architecture with Simultaneous Weight Loading/Computing and Balance Capabilities

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33.2 A Fully Integrated Analog ReRAM Based 78.4TOPS/W Compute-In-Memory Chip with Fully Parallel MAC Computing.

FangTianSim: High-Level Cycle-Accurate Resistive Random-Access Memory-Based Multi-Core Spiking Neural Network Processor Simulator

Fully Hardware Memristive Neuromorphic Computing Enabled by the Integration of Trainable Dendritic Neurons and High‐Density RRAM Chip

CLEAR: a Full-Stack Chip-in-loop Emulator for Analog RRAM Based Computing-in-memory System

DS-CIM: A 40nm Asynchronous Dual-Spike Driven, MRAM Compute-In-Memory Macro for Spiking Neural Network

In-Memory Computing Integrated Structure Circuit Based on Nonvolatile Flash Memory Unit

34.3 A 22nm 64kb Lightning-Like Hybrid Computing-in-Memory Macro with a Compressed Adder Tree and Analog-Storage Quantizers for Transformer and CNNs.