Abstract:The spiking activity of neocortical neurons exhibits a striking level of variability, even when these networks are driven by identical stimuli. The approximately Poisson firing of neurons has led to the hypothesis that these neural networks operate in the asynchronous state. In the asynchronous state neurons fire independently from one another, so that the probability that a neuron experience synchronous synaptic inputs is exceedingly low. While the models of asynchronous neurons lead to observed spiking variability, it is not clear whether the asynchronous state can also account for the level of subthreshold membrane potential variability. We propose a new analytical framework to rigorously quantify the subthreshold variability of a single conductance-based neuron in response to synaptic inputs with prescribed degrees of synchrony. Technically we leverage the theory of exchangeability to model input synchrony via jump-process-based synaptic drives; we then perform a moment analysis of the stationary response of a neuronal model with all-or-none conductances that neglects post-spiking reset. As a result, we produce exact, interpretable closed forms for the first two stationary moments of the membrane voltage, with explicit dependence on the input synaptic numbers, strengths, and synchrony. For biophysically relevant parameters, we find that the asynchronous regime only yields realistic subthreshold variability (voltage variance $\simeq 4-9\mathrm{mV^2}$) when driven by a restricted number of large synapses, compatible with strong thalamic drive. By contrast, we find that achieving realistic subthreshold variability with dense cortico-cortical inputs requires including weak but nonzero input synchrony, consistent with measured pairwise spiking correlations.

Process Voltage Temperature Variability Estimation of Tunneling Current for Band-to-Band-Tunneling based Neuron

Design Space and Variability Analysis of SOI MOSFET for Ultra-Low Power Band-to-Band Tunneling Neurons

Band-to-Band Tunneling based Ultra-Energy Efficient Silicon Neuron

Quantum Tunneling Based Ultra-Compact and Energy Efficient Spiking Neuron Enables Hardware SNN

Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing

Spintronic Neuron Using a Magnetic Tunnel Junction for Low-Power Neuromorphic Computing

Subthreshold CMOS Implementation of the Izhikevich Neuron Model

Implementation of a Spiking Neuron in CMOS

Estimation and Compensation of Process Induced Variations in Nanoscale Tunnel Field Effect Transistors (TFETs) for Improved Reliability

Exact analysis of the subthreshold variability for conductance-based neuronal models with synchronous synaptic inputs

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

The Artificial Neuron: Built From Nanosheet Transistors to Achieve Ultra Low Power Consumption

Ultra-low power neuromorphic obstacle detection using a two-dimensional materials-based subthreshold transistor

Investigating the impact of BTI, HCI and time-zero variability on neuromorphic spike event generation circuits

Exploiting Inherent Error-Resiliency of Neuromorphic Computing to achieve Extreme Energy-Efficiency through Mixed-Signal Neurons

Towards The Systematic Study Of Aging Induced Dynamic Variability In Nano-Mosfets: Adding The Missing Cycle-To-Cycle Variation Effects Into Device-To-Device Variation

Performance comparison between p-i-n tunneling transistors and conventional MOSFETs

p-i-n Tunnel FETs vs. n-i-n MOSFETs: Performance Comparison from Devices to Circuits

Ultra-low Energy charge trap flash based synapse enabled by parasitic leakage mitigation

Low-Power (1T1N) Skyrmionic Synapses for Spiking Neuromorphic Systems