Abstract:We present a new efficient way to perform hybrid density functional theory (DFT)-based electronic structure calculations. The new method uses an interpolative separable density fitting (ISDF) procedure to construct a set of numerical auxiliary basis vectors and a compact approximation of the matrix consisting of products of occupied orbitals represented in a large basis set such as the planewave basis. Such an approximation allows us to reduce the number of Poisson solves from [Formula: see text] to [Formula: see text] when we apply the exchange operator to occupied orbitals in an iterative method for solving the Kohn-Sham equations, where Ne is the number of electrons in the system to be studied. We show that the ISDF procedure can be carried out in [Formula: see text] operations, with a much smaller preconstant compared to methods used in existing approaches. When combined with the recently developed adaptively compressed exchange (ACE) operator formalism, which reduces the number of times the exchange operator needs to be updated, the resulting ACE-ISDF method significantly reduces the computational cost associated with the exchange operator by nearly 2 orders of magnitude compared to existing approaches for a large silicon system with 1000 atoms. We demonstrate that the ACE-ISDF method can produce accurate energies and forces for insulating and metallic systems and that it is possible to obtain converged hybrid functional calculation results for a 1000-atom bulk silicon within 10 min on 2000 computational cores. We also show that ACE-ISDF can scale to 8192 computational cores for a 4096-atom bulk silicon system. We use the ACE-ISDF method to geometrically optimize a 1000-atom silicon system with a vacancy defect using the HSE06 functional and computes its electronic structure. We find that that the computed energy gap from the HSE06 functional is much closer to the experimental value compared to that produced by semilocal functionals in the DFT calculations.

Formation energy of intrinsic defects in silicon from the Galitskii-Migdal formula

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Formation energies of charged defects in two-dimensional materials -- resolution of long-standing difficulties

Formation energies of silicon self-interstitials using periodic coupled cluster theory

Self Diffusion in Silicon Using the Ackland Potential

Calculation of Defects in Silicon by a New Tight-Binding Model

New Perspective on Formation Energies and Energy Levels of Point Defects in Nonmetals

Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes

Ab Initio Calculation of Vacancies and Interstitials in NiSi 2

Efficient Full-frequency GW Calculations using a Lanczos Method

Energy density in density functional theory: Application to crystalline defects and surfaces

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Interpolative Separable Density Fitting Decomposition for Accelerating Hybrid Density Functional Calculations with Applications to Defects in Silicon

Determination Of Formation And Ionization Energies Of Charged Defects In Two-Dimensional Materials

Improving the convergence of defect calculations in supercells - an ab initio study of the neutral silicon vacancy

Physics of band-filling correction in defect calculations of solid-state materials

Accelerating GW calculations of point defects with the defect-patched screening approximation

The kinetics of formation and the parameters of radiation defect clusters in silicon

Wannier-functions characterization of floating bonds in a-Si

Comparison of charged-defect finite-size supercell correction methods in a general framework