Abstract:Doping and defect control in semiconductors are essential prerequisites for their practical applications. First-principles defect calculations based on density functional theory offer crucial theoretical guidance for doping and defect control. This paper introduces the developments in the theoretical methods of first-principles semiconductor defect calculations. We will firstly introduce the method of the defect formation energy calculations, as well as finite-size errors to defect formation energies caused by the supercell method. We then present corresponding image charge correction schemes, which includes the widely used post-hoc corrections (such as Makov-Payne (MP), Lany-Zunger (LZ), Freysoldt-Neugebauer-Van de Walle(FNV) schemes), the recently developed self-consistent potential correction which performs the image charge correction in the self-consistent loop for solving Kohn-Sham equations, and the self-consistent charge correction scheme which does not require an input of macroscopic dielectric constants. Furthermore, we extend our discussions to charged defect calculations in low-dimensional semiconductors, elucidating the issue of charged defect formation energy divergence with increasing vacuum thickness under the jellium model, and introducing our theoretical model which fixes this energy divergence issue by placing the ionized electrons or holes in the realistic host band-edge states instead of the virtual jellium state. Then, we further provide a brief overview on defect calculation correction methods due to the DFT band gap error, including the scissors operator, LDA+U and hybrid functionals. Finally, to describe the defects formation energy calculations under illumination, we present our self-consistent two-Fermi-reservoirs model, which predicts well the defects and carrier concentrations under illumination in the Mg doped GaN system. This work summarizes the recent developments regarding first-principles defect calculations in semiconductors and might offer guidance for defect calculations in semiconductors especially low-dimensional ones, under both equilibrium and non-equilibrium conditions, aiding further advancements in doping and defect control within semiconductors.

Comparison of charged-defect finite-size supercell correction methods in a general framework

Finite-Size Corrections to Defect Energetics along One-Dimensional Configuration Coordinate

Image charge interaction correction in charged-defect calculations

Revisiting the Formulation of Charged Defect in Solids

Improving the convergence of defect calculations in supercells - an ab initio study of the neutral silicon vacancy

First-principles calculations for point defects in solids

Supercell calculations in the reduced Hartree-Fock model for crystals with local defects

A realistic dimension-independent approach for charged defect calculations in semiconductors

Physics of band-filling correction in defect calculations of solid-state materials

Geometrical correction for the inter- and intramolecular basis set superposition error in periodic density functional theory calculations

First-principles calculation of defect free energies: General aspects illustrated in the case of bcc-Fe

Defect Energy Levels in Density Functional Calculations: Alignment and Band Gap Problem

Review of the developments of first-principles defect calculations in semiconductors

CoFFEE: Corrections For Formation Energy and Eigenvalues for charged defect simulations

The decoupled DFT-$\frac{1}{2}$ method for defect excitation energies

Modeling Charged Defects Using the Defect Energy Formalism With a Charge Sublattice Within a CALPHAD Framework

Interpolative Separable Density Fitting Decomposition for Accelerating Hybrid Density Functional Calculations with Applications to Defects in Silicon

Accelerating GW calculations of point defects with the defect-patched screening approximation

An extended computational approach for point-defect equilibria in semiconductor materials

Energetics of point defects in aluminum via orbital-free density functional theory

First-principles calculations of defects in metal halide perovskites: a performance comparison of density functionals