Abstract:Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their mid-gap electronic structure and orbital/spin wave-function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic mid-gap states to the well-established photoluminescence response (including single photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: 1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM, and 2) multi-site defect complexes exhibiting a ladder of empty and occupied mid-gap states characterized by distinct spatial geometries. Combining direct probing of mid-gap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics.

Effect of Environmental Screening and Strain on Optoelectronic Properties of Two-Dimensional Quantum Defects

Wide-Field Spectral Super-Resolution Mapping of Optically Active Defects in Hexagonal Boron Nitride.

Dielectric environment sensitivity of carbon centres in hexagonal boron nitride

Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities

Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated cathodoluminescence, photoluminescence, and strain mapping

Strain-modulated defect engineering of two-dimensional materials

Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences

Optical properties of low‐defect large‐area h–BN for quantum applications

Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride

Fingerprinting quantum emitters in hexagonal boron nitride using strain

Low-temperature electron-phonon interaction of quantum emitters in hexagonal Boron Nitride

Quantum Emission from Coupled Spin Pairs in Hexagonal Boron Nitride

Quantum light generation with ultra-high spatial resolution in 2D semiconductors via ultra-low energy electron irradiation

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Interplay of plasmonics and strain for Hexagonal Boron Nitride emission engineering

Decoherence of Quantum Emitters in hexagonal Boron Nitride

Optical Signatures of Quantum Emitters in Suspended Hexagonal Boron Nitride

First-principles study of optical properties of monolayer h-BN and its defect structures under equibiaxial strain

Multi-species optically addressable spin defects in a van der Waals material

Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nano-Cavity