Quantum light generation with ultra-high spatial resolution in 2D semiconductors via ultra-low energy electron irradiation

Ajit Kumar Dash,Sharad Kumar Yadav,Sebastien Roux,Manavendra Pratap Singh,Kenji Watanabe,Takashi Taniguchi,Akshay Naik,Cedric Robert,Xavier Marie,Akshay Singh

2024-09-16

Abstract:Single photon emitters (SPEs) are building blocks of quantum technologies. Defect engineering of 2D materials is ideal to fabricate SPEs, wherein spatially deterministic and quality-preserving fabrication methods are critical for integration into quantum devices and cavities. Existing methods use combination of strain and electron irradiation, or ion irradiation, which make fabrication complex, and limited by surrounding lattice damage. Here, we utilise only ultra-low energy electron beam irradiation (5 keV) to create dilute defect density in hBN-encapsulated monolayer MoS2, with ultra-high spatial resolution (< 50 nm, extendable to 10 nm). Cryogenic photoluminescence spectra exhibit sharp defect peaks, following power-law for finite density of single defects, and characteristic Zeeman splitting for MoS2 defect complexes. The sharp peaks have low spectral jitter (< 200 {\mu}eV), and are tuneable with gate-voltage and electron beam energy. Use of low-momentum electron irradiation, ease of processing, and high spatial resolution, will disrupt deterministic creation of high-quality SPEs.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is: how to achieve the deterministic fabrication of single - photon emitters (SPEs) with ultra - high spatial resolution (< 50 nm, scalable to 10 nm) by using ultra - low - energy electron - beam irradiation (5 keV) in two - dimensional semiconductor materials (such as monolayer MoS₂). Specifically, the paper focuses on the following points:

1. **Limitations of existing methods**:
- Current methods usually combine strain and electron or ion irradiation, and these methods are complex and prone to cause damage to the surrounding lattice.
- Although ultraviolet light irradiation is simple, it lacks high - precision spatial resolution.
- Strain engineering and chemical treatment methods face challenges in the simultaneous creation of multiple defects, reproducibility, and environmental stability.

2. **Advantages of the new method**:
- Using an ultra - low - energy electron beam (5 keV) can reduce damage to the surrounding lattice, thereby improving the quality of single - photon emitters.
- The new method has high spatial resolution (< 50 nm, scalable to 10 nm), enabling single - photon emitters to be precisely placed at the desired location.
- By adjusting the electron - beam energy and gate voltage, the performance of single - photon emitters can be regulated.

3. **Experimental verification**:
- The paper shows that highly localized defects can be created in monolayer MoS₂ by this method, and these defects are manifested as sharp peaks (line width < 1 meV) in the photoluminescence (PL) spectrum.
- These sharp peaks exhibit power - law saturation behavior related to single defects and have high spectral stability (spectral jitter < 200 μeV).
- Experiments have also confirmed that these defects can be regulated by electron - beam dose and acceleration voltage to further optimize the performance of single - photon emitters.

4. **Application prospects**:
- High - precision single - photon emitters can be integrated into quantum devices and cavities for frontier fields such as quantum computing, sensing, and communication.
- The new method lays the foundation for the development of next - generation quantum technology and may promote basic research on defect - defect coupling and electron - matter interaction.

In summary, this paper aims to develop a new, efficient, and low - damage method to achieve high - precision fabrication of single - photon emitters in two - dimensional materials, thereby promoting the development of quantum technology.