Particle charging during pulsed EUV exposures with afterglow effect

M. Chaudhuri,L. C. J. Heijmans,M. van de Kerkhof,P. Krainov,D. Astakhov,A. M. Yakunin

2023-03-26

Abstract:The nanoparticle charging processes along with background spatial-temporal plasma profile have been investigated with 3DPIC simulation in a pulsed EUV exposure environment. It is found that the particle charge polarity (positive or negative) strongly depends on its size, location and background transient plasma conditions. The particle (100 nm diameter) charge reaches steady state in a single pulse (20 us) within the EUV beam in contrast to particles outside the beam that requires multiple pulses. The larger the particle size, the less number of pulses are required to reach steady state. It is found that the charge of a particle decreases with pressure in a faster rate outside the beam compared to inside. The results are of importance for particle contamination (defectivity) control strategy for EUV lithography machines.

Plasma Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the nanoparticle charging process and its relationship with the background spatiotemporal plasma distribution in the extreme - ultraviolet (EUV) pulse exposure environment. Specifically, through the 3D PIC (particle - in - cell) simulation method, the researchers explored how the charge polarity (positive or negative) of particles is affected by their size, position, and transient background plasma conditions in the EUV pulse exposure environment. The research focuses on:

1. **Particle charging characteristics**: The charging of particles reaches a steady state within a single pulse (20 microseconds), especially within the EUV beam, while particles outside the beam require multiple pulses to reach a steady state. The larger the particle size, the fewer the number of pulses required to reach a steady state.

2. **Pressure influence**: It was found that the charge of particles decreases as the pressure increases, and the rate of decrease outside the beam is faster than that inside the beam.

3. **Application in EUV lithography machines**: These results are of great significance for the strategies of controlling particle contamination (defect rate) in EUV lithography machines, especially for high - resolution, high - volume manufacturing products at the 7 - nm and 5 - nm nodes.

By detailedly analyzing the evolution process of the plasma generated by EUV pulses at different stages and the charging mechanism of particles under these conditions, the paper aims to provide theoretical basis and technical support for particle contamination control in EUV lithography technology. This not only helps to improve the manufacturing precision in the semiconductor industry, but also provides a new perspective for understanding the physical characteristics of EUV - induced plasma.