Abstract:The quantum size effect has a significant impact on electrons, such that it can even change their topologically protected properties. An example of this phenomenon is the gap opening in the topologically protected gapless surface state in finite-thickness topological-insulator films. However, much is not known about the quantum size effect in topological heterojunctions. In this study, by calculating the single-particle spectrum of Bi/Bi$_{1-x}$Sb$_{x}$ based on the well-known Liu-Allen model, we found that the strong quantum size effect in topological heterojunctions yields an unexpected band alignment. The wave functions permeate each other through the attached materials, and this occurs even in 80-nm-thick heterojunctions. Furthermore, we theoretically found that one of the two major spectra obtained from the Bi surface does not represent the true surface state of Bi. This finding may overturn the previous understanding of the topological surface state of Bi.

What problem does this paper attempt to address?

### The problems the paper attempts to solve This paper aims to explore the influence of the quantum size effect in topological heterojunctions, especially in Bi/BiSb heterojunctions. Specifically, the researchers hope to reveal the influence of the strong quantum size effect on wave - function penetration and surface states by calculating the single - particle spectra. #### Main problems include: 1. **The influence of the quantum size effect on wave - function penetration**: The researchers found that in thick Bi/BiSb heterojunctions, electron wave functions can penetrate each other even though these materials are spatially separated. This phenomenon occurs in heterojunctions with a thickness of up to 80 nm. 2. **The true nature of surface states**: By studying the main spectral lines (S1 and S2) on the Bi surface, the researchers found that one of the spectral lines (S1) is not a true Bi surface state, but a "surface - layer" surface state originating from the BiSb region. This indicates that the previous understanding of the Bi topological surface state may need to be re - evaluated. 3. **Abnormal behavior of band alignment**: The researchers observed that the band alignment at the M point is inconsistent with the traditional heterojunction model. Normally, the band alignment bends at the interface, but in this study, the band alignment remains flat and there is no significant change in the energy level. This phenomenon exceeds the expectations of traditional theory. 4. **The influence of the quantum size effect on the band structure**: The researchers also explored the single - particle spectra at different thicknesses and found that in thicker heterojunctions (such as 200 + 200 BL and 250 + 250 BL), the wave - function penetration phenomenon gradually disappears and the band structure exhibits different characteristics. #### Research background: - The interface states (IS) of topological insulators in a finite - thickness system will be affected by the quantum size effect, resulting in the opening of the band gap or changes in surface states. - Previous studies have mainly focused on extremely short - range wave - function penetration (< 1.5 nm), while this study shows a wave - function penetration phenomenon over a longer distance (up to 40 nm). #### Research methods: - Use the Liu - Allen model to calculate the single - particle spectra of Bi/BiSb heterojunctions. - By changing the Sb content (x) and film thickness (n), study their influence on the band structure and wave - function distribution. - Use angle - resolved photoemission spectroscopy (ARPES) to simulate experimental results for verification. ### Summary This paper reveals the important role of the quantum size effect in thick topological heterojunctions, especially the long - range penetration phenomenon of wave functions and its influence on surface states. The research results not only help to understand the unique properties of Bi/BiSb heterojunctions, but also provide a new perspective for the study of heterojunctions in other long - wavelength electron systems.

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