Abstract:The discovery of current-induced spin-orbit torque (SOT) orthogonal reorientation, also known as orthogonal switching, of metallic Mn$_2$Au and CuMnAs has opened the door for ultrafast writing of an antiferromagnet (AFM). Phenomenological theory predicts that the minimum field necessary for SOT switching -- critical field -- for ultrashort pulses increases inversely proportional to the pulse duration, thereby limiting the use of ultrafast stimulus as driving force for switching. We explore the possibility that by varying the working temperature the critical field reduces enabling orthogonal switching in response to ultrashort pulses. To do so, we extend previous theory to finite temperature and show that the critical field for an orthogonal switching strongly depends on temperature. We determine how the temperature dependence of the critical field varies as a function of the pulse duration. While for long pulses, the temperature dependence of the critical field is determined by the anisotropy field, for ultrashort pulses, it is determined by the characteristic frequency of the AFM. We show that the short and long pulse duration limits for the critical field can be connected by an analytical expression.

What problem does this paper attempt to address?

This paper attempts to address the issue of how the critical spin-orbit torque (SOT) field required for ultrafast electric control of magnetic order reorientation (i.e., orthogonal switching) in antiferromagnetic materials varies with temperature. Specifically, the paper explores the possibility of reducing the critical field by changing the operating temperature, thereby achieving orthogonal switching under ultrashort pulses. ### Background 1. **Current-induced spin-orbit torque (SOT)**: It has been found that in metals Mn₂Au and CuMnAs, current can induce SOT, thereby achieving orthogonal reorientation of magnetic order. 2. **Relationship between critical field and pulse duration**: Theoretical predictions suggest that for ultrashort pulses, the critical field required for SOT switching decreases with increasing pulse duration, which limits the application of ultrafast excitation as a driving force for switching. ### Research Objectives - **Explore the effect of temperature on the critical field**: By extending previous zero-temperature theory to finite temperatures, study how the critical field varies with temperature. - **Determine the temperature dependence of the critical field**: Analyze the temperature dependence of the critical field for different pulse durations, especially for ultrashort pulses. ### Main Findings 1. **Temperature dependence of the critical field**: The study found that the temperature dependence of the critical field differs for long pulses and ultrashort pulses: - For long pulses, the temperature dependence of the critical field is mainly determined by the anisotropy field. - For ultrashort pulses, the temperature dependence of the critical field is mainly determined by the characteristic frequency of the antiferromagnetic material. 2. **Analytical expression for the critical field**: An analytical expression was proposed to connect the critical fields for long pulses and ultrashort pulses. 3. **Numerical validation**: The theoretical assumptions were validated through numerical simulations, particularly the results from atomistic spin dynamics (ASD) simulations. ### Practical Applications - **Reducing the critical field**: By adjusting the temperature, the critical field required for achieving orthogonal switching can be significantly reduced, thereby improving the efficiency of ultrafast electric control of magnetic order reorientation. - **Thermally assisted magnetic switching**: The research results can be used to design thermally assisted magnetic switching strategies, such as using laser pulses to momentarily heat the system and reduce the critical field. ### Conclusion Through theoretical and numerical simulations, this paper discusses in detail the impact of temperature on the critical field required for ultrafast electric control of magnetic order reorientation in antiferromagnetic materials, providing new ideas for achieving efficient, low-energy information storage and processing.

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