Abstract:Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin sub-lattices is a unique metallic material for Néel-order spin-orbit torque (SOT) switching. Here we investigate the SOT switching in quasi-epitaxial (103), (101) and (204) Mn2Au films prepared by a simple magnetron sputtering method. We demonstrate current induced antiferromagnetic moment switching in all the prepared Mn2Au films by a short current pulse at room temperature, whereas different orientated films exhibit distinguished switching characters. A direction-independent reversible switching is attained in Mn2Au (103) films due to negligible magnetocrystalline anisotropy energy, while for Mn2Au (101) and (204) films, the switching is invertible with the current applied along the in-plane easy axis and its vertical axis, but becomes attenuated seriously during initially switching circles when the current is applied along hard axis, because of the existence of magnetocrystalline anisotropy energy. Besides the fundamental significance, the strong orientation dependent SOT switching, which was not realized irrespective of ferromagnet and antiferromagnet, provides versatility for spintronics.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the magnetic moment flipping behavior caused by spin - orbit torque (SOT) in the antiferromagnetic material Mn₂Au and its dependence on different crystal orientations. Specifically, the researchers focus on the following points: 1. **Strong orientation - dependent spin - orbit torque**: Verify experimentally the magnetic moment flipping characteristics of Mn₂Au films with different orientations (such as (103), (101) and (204) orientations) under the action of current pulses, and analyze the relationship between these characteristics and crystal orientations. 2. **Achieve magnetic moment flipping at room temperature**: Prove that under room - temperature conditions, the magnetic moment flipping of Mn₂Au films can be achieved through short - time current pulses, which provides the possibility for practical applications. 3. **Reveal the unique properties of antiferromagnetic materials**: Explore the potential advantages of Mn₂Au, an antiferromagnetic material with zero net magnetic moment, strong anti - interference ability and ultrafast switching speed, in high - density information storage. ### Main research content - **Experimental methods**: - Quasi - epitaxial (103), (101) and (204) - oriented Mn₂Au films were prepared by magnetron sputtering. - The antiferromagnetic properties of Mn₂Au films were confirmed by SQUID magnetometer. - Current - induced magnetic moment flipping experiments were carried out using a star - shaped device structure, and the change in planar Hall resistance was measured. - **Theoretical analysis**: - The magnetocrystalline anisotropy energy (MAE) of Mn₂Au with different orientations was calculated, and based on this, the differences in magnetic moment flipping behaviors under different orientations were explained. ### Key findings 1. **(103) - oriented Mn₂Au**: Due to the almost non - existent magnetocrystalline anisotropy energy, orientation - independent reversible magnetic moment flipping was achieved. 2. **(101) and (204) - oriented Mn₂Au**: When the current is applied along the in - plane easy axis or its perpendicular direction, reversible magnetic moment flipping can be achieved; when the current is applied along the hard axis, the flipping effect is significantly weakened because of the existence of magnetocrystalline anisotropy energy. ### Significance and application prospects - **Significance of basic research**: For the first time, the strong orientation - dependent spin - orbit torque effect in antiferromagnetic materials was demonstrated, which is a phenomenon that has not been achieved before in ferromagnets and antiferromagnets. - **Application potential**: This orientation - dependent SOT effect provides new possibilities for spintronics, especially in high - density information storage and low - power - consumption spin logic devices. Through these studies, the authors not only have an in - depth understanding of the physical properties of Mn₂Au, but also lay the foundation for the future development of high - performance antiferromagnetic spintronic devices.

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