Abstract:Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of converting the information-carrying charge current into magnetization switching sets fundamental limitations in energy consumption. Other non-magnetic non-volatile memories such as memristors, ferroelectric memory and phase change memory devices also rely on energetically relatively costly crystal structural rearrangements to store information. In contrast, conventional electronic charge states in quantum dots for example, can be switched in femtoseconds with high efficiency, but any stored information dissipates rapidly. Here we present a radically different approach in the form of a charge-configuration memory (CCM) device that relies on charge-injection-driven electronic crystal melting and topological protection of the resulting electronic domain configurations of a two-dimensional electronic crystal to store information. With multiprobe scanning tunneling microscopy (STM) we show microscopically, within an operational device, how dislocations in the domain ordering lead to metastability by a mechanism that is topologically equivalent to magnetic bubble memory. The devices have a very small switching energy (<2.2 fJ/bit), ultrafast switching speed of <11 ps and operational range over more than 3 orders of magnitude in temperature (<250 mK ~ 190 K). Together with their simple functionality, a large resistance switching ratio, straightforward fabrication and impressive endurance, CCM devices introduce a new memory paradigm in emerging cryo-computing and other high-performance computing applications that require ultrahigh speed and low energy consumption.

Nanocryotron-driven Charge Configuration Memory

Energy efficient manipulation of topologically protected states in non-volatile ultrafast charge configuration memory devices

A Compact Superconducting Nanowire Memory Element Operated by Nanowire Cryotrons

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Carbon Nanotube-Based Nonvolatile Memory with Charge Storage in Metal Nanocrystals

Quantum Memory Using a Hybrid Circuit with Flux Qubits and Nitrogen-Vacancy Centers

CryoCiM: Cryogenic compute-in-memory based on the quantum anomalous Hall effect

A nanoCryotron comparator can connect single-flux quantum circuits to conventional electronics

Carbon Nanotube Based Non-Volatile Memory and Charge Sensors

Cryogenic Memory Technologies

Nanoscale superconducting memory based on the kinetic inductance of asymmetric nanowire loops

Memristor-based cryogenic programmable DC sources for scalable in-situ quantum-dot control

Design and Performance of Parallel-channel Nanocryotrons in Magnetic Fields

Attojoule superconducting thermal logic and memories

Fast non-thermal switching between macroscopic charge-ordered quantum states induced by charge injection

Numerical modelling of a vortex-based superconducting memory cell: dynamics and geometrical optimization of a fluxonic quantum dot

Quantum Computer Control using Novel, Hybrid Semiconductor-Superconductor Electronics

Superconducting Quantum Memory with a Suspended Coaxial Resonator

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

Cryogenic Reconfigurable Logic with Superconducting Heater Cryotron: Enhancing Area Efficiency and Enabling Camouflaged Processors