Abstract:The most promising quantum algorithms require quantum processors that host millions of quantum bits when targeting practical applications<a href="/articles/s41586-021-03469-4#ref-CR1">1</a>. A key challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, an important interconnect bottleneck appears between the quantum chip in a dilution refrigerator and the room-temperature electronics. Advanced lithography supports the fabrication of both control electronics and qubits in silicon using technology compatible with complementary metal oxide semiconductors (CMOS)<a href="/articles/s41586-021-03469-4#ref-CR2">2</a>. When the electronics are designed to operate at cryogenic temperatures, they can ultimately be integrated with the qubits on the same die or package, overcoming the 'wiring bottleneck'<a href="#ref-CR3">3</a>,<a href="#ref-CR4">4</a>,<a href="#ref-CR5">5</a>,<a href="/articles/s41586-021-03469-4#ref-CR6">6</a>. Here we report a cryogenic CMOS control chip operating at 3 kelvin, which outputs tailored microwave bursts to drive silicon quantum bits cooled to 20 millikelvin. We first benchmark the control chip and find an electrical performance consistent with qubit operations of 99.99 per cent fidelity, assuming ideal qubits. Next, we use it to coherently control actual qubits encoded in the spin of single electrons confined in silicon quantum dots<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-021-03469-4#ref-CR9">9</a> and find that the cryogenic control chip achieves the same fidelity as commercial instruments at room temperature. Furthermore, we demonstrate the capabilities of the control chip by programming a number of benchmarking protocols, as well as the Deutsch–Josza algorithm<a href="/articles/s41586-021-03469-4#ref-CR10">10</a>, on a two-qubit quantum processor. These results open up the way towards a fully integrated, scalable silicon-based quantum computer.

CryoCiM: Cryogenic compute-in-memory based on the quantum anomalous Hall effect

An Overview of Computing-in-Memory Interfaces

Cryogenic Memory Technologies

A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

Cryogenic quasi-static embedded DRAM for energy-efficient compute-in-memory applications

Cryo-CMOS for Quantum System On-Chip Integration: Quantum Computing as the Development Driver

Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures

Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET

A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS Memory

Quantum Computer Control using Novel, Hybrid Semiconductor-Superconductor Electronics

Energy-Efficient Cryogenic Ternary Content Addressable Memory using Ferroelectric SQUID

Cryogenic Control and Readout Integrated Circuits for Solid-State Quantum Computing

An In-Memory-Computing Structure with Quantum-Dot Transistor Toward Neural Network Applications: From Analog Circuits to Memory Arrays

Cryogenic Reconfigurable Logic with Superconducting Heater Cryotron: Enhancing Area Efficiency and Enabling Camouflaged Processors

Cryogenic Characerization and Modeling of Standard CMOS down to Liquid Helium Temperature for Quantum Computing

Cryogenic Materials and Circuit Integration for Quantum Computers

Nanocryotron-driven Charge Configuration Memory

Method for Efficient Large-Scale Cryogenic Characterization of CMOS Technologies

CMOS-based cryogenic control of silicon quantum circuits

Cryo-CMOS Band-gap Reference Circuits for Quantum Computing