Abstract:Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA and TC might be adjusted in ultrathin films by engineering composition, strain, or applying an electric field. In this work, we demonstrate the molecular beam epitaxy (MBE) growth of vdW heterostructures of five-monolayer quasi-freestanding Cr2Te3 on three classes of 2D materials: graphene (semimetal), WSe2 (semiconductor) and Bi2Te3 (topological insulator). By combining structural and chemical analysis down to the atomic level with ab initio calculations, we confirm the single crystalline character of Cr2Te3 films on the 2D materials with sharp vdW interfaces. They all exhibit PMA and TC close to the bulk Cr2Te3 value of 180 K. Ab initio calculations confirm this PMA and show how its strength depends on strain. Finally, Hall measurements reveal a strong anomalous Hall effect, which changes sign at a given temperature. We theoretically explain this effect by a sign change of the Berry phase close to the Fermi level. This transition temperature depends on the 2D material in proximity, notably as a consequence of charge transfer. MBE-grown Cr2Te3/2D material bilayers constitute model systems for the further development of spintronic devices combining PMA, large spin-orbit coupling and sharp vdW interface.

Scanning tunneling microscopy of Bi$_2$Te$_3$ films prepared by pulsed laser deposition: from nanocrystalline structures to van der Waals epitaxy

Pulsed-laser Epitaxy of Topological Insulator Bi2Te3 Thin Films

Molecular Beam Epitaxy of Bilayer Bi(111) Films on Topological Insulator Bi2te3: A Scanning Tunneling Microscopy Study

Enhanced Thermoelectric Performance in Three-Dimensional Superlattice of Topological Insulator Thin Films

Scanning tunneling microscopy study of epitaxial Fe 3 GeTe 2 monolayers on Bi 2 Te 3

Intrinsic Ultrathin Topological Insulators Grown via MBE Characterized by in-situ Angle Resolved Photoemission Spectroscopy

Scanning Tunneling Microscopy Study of Epitaxial Fe3GeTe2 Monolayers on Bi2Te3

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Investigating and Manipulating the Molecular Beam Epitaxy Growth Kinetics of Intrinsic Magnetic Topological Insulator MnBi2Te4 with in Situ Angle-Resolved Photoemission Spectroscopy

Investigating and manipulating the molecular beam epitaxy growth kinetics of intrinsic magnetic topological insulator MnBi2Te4within situangle-resolved photoemission spectroscopy.

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Micro-metric Electronic Patterning of a Topological Band Structure Using a Photon Beam

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

Raman Spectroscopy Of Epitaxial Topological Insulator Bi2te3 Thin Films On Gan Substrates

Molecular beam epitaxial growth of topological insulators.

Near‐Field Plasmons Imaging and Energy Analysis on Bi2Te3 Film

Unraveling the nature of quasi van der Waals Epitaxy of magnetic topological insulators Cr: (BixSb1-x)2Te3 on a GaAs (111) substrate through coherently strained interface

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Annealing-Induced Bi Bilayer on Bi2Te3 Investigated Via Quasi-Particle-Interference Mapping

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Observing Electronic Structures on Ex-Situ Grown Topological Insulator Thin Films