Expansion of Graphene-Based Device Technology for Resistance Metrology

Albert F. Rigosi

DOI: https://doi.org/10.48550/arXiv.2202.05954

2022-02-12

Abstract:The field of Quantum Hall metrology had a strong start with the implemntation of GaAs-based devices, given that 2D materials systems provided access to interesting quantum phenomena, including the infrastructure associated with making relevant measurements. With the technology laid out, further improvements in both infrastructure and standards were achieved in the previous two decades as EG-based quantized Hall resistance (QHR) devices became established as national standards. Since the metrology community has reached some understanding that a comparison against GaAs-based QHR devices had been accomplished, the next steps became clearer as far as how the EG-based QHR with a single Hall bar could be further developed. Since the early 90s, it has been of modest interest that QHR devices have a means of interconnecting several single Hall bar elements and has since been a subject of research. NMIs are now presently at a juncture where consideration must be granted beyond just simplicity of operation. A natural direction for resistance standards would be to increase the total accessible parameter space. This means using EG-based QHR devices to output more than the single value at the $\nu = 2$ plateau (about 12.9 k$\Omega$). A first natural question is whether one may use the $\nu = 6$ plateau or $\nu = 10$ plateau, and though some work has been done with these Landau levels in graphene, they simply do not offer the same level of precision as the $\nu = 2$ plateau.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to expand the application of graphene - based quantum Hall resistance (QHR) devices in resistance metrology, in order to provide a wider range and more accurate resistance value output. Specifically, the article explores the following aspects:

1. **Beyond the limitations of a single Hall bar**: Traditional GaAs - based quantum Hall resistance devices can only provide a single resistance value (e.g., approximately 12.9 kΩ on the ν = 2 platform). In order to expand the accessible parameter space, researchers hope to develop devices that can output more resistance values.

2. **Application of p - n junctions**: By introducing p - n junctions (pn Js), regions with different charge - carrier polarities can be combined in graphene, which may provide useful resistance quantization. The article discusses how p - n junction devices can avoid the complexity and precision problems brought by traditional metal contacts and shows their potential in resistance standards.

3. **Development of array technology**: Due to the difficulty in manufacturing p - n junction devices larger than 100 μm, researchers have explored the use of superconducting materials (such as NbN and NbTiN) to create compatible contact pads to achieve new resistance outputs. In addition, a method of constructing large arrays by connecting multiple individual Hall bars in series and in parallel is also introduced to obtain a wider range of resistance values.

4. **Extension of standards from DC to AC**: With the expansion of the quantum SI unit system, researchers have also explored how to apply graphene - based QHR devices to AC resistance standards and how to use these devices to achieve higher - precision current and mass metrology.

In summary, this paper aims to expand the application range of graphene - based quantum Hall resistance devices through innovative device design and technical means, thereby providing more possibilities and higher precision for resistance metrology.