Abstract:Magnetic field-driven insulating states in graphene are associated with samples of very high quality. Here, this state is shown to exist in monolayer graphene grown by chemical vapor deposition (CVD) and wet transferred on Al2O3 without encapsulation with hexagonal boron nitride (h-BN) or other specialized fabrication techniques associated with superior devices. Two-terminal measurements are performed at low temperature using a GaAs-based multiplexer. During high-throughput testing, insulating properties are found in a 10 μm long graphene device which is 10 μm wide at one contact with an ≈440 nm wide constriction at the other. The low magnetic field mobility is ≈6000 cm2 V-1 s-1. An energy gap induced by the magnetic field opens at charge neutrality, leading to diverging resistance and current switching on the order of 104 with DC bias voltage at an approximate electric field strength of ≈0.04 V μm-1 at high magnetic field. DC source-drain bias measurements show behavior associated with tunneling through a potential barrier and a transition between direct tunneling at low bias to Fowler-Nordheim tunneling at high bias from which the tunneling region is estimated to be on the order of ≈100 nm. Transport becomes activated with temperature from which the gap size is estimated to be 2.4 to 2.8 meV at B = 10 T. Results suggest that a local electronically high quality region exists within the constriction, which dominates transport at high B, causing the device to become insulating and act as a tunnel junction. The use of wet transfer fabrication techniques of CVD material without encapsulation with h-BN and the combination with multiplexing illustrates the convenience of these scalable and reasonably simple methods to find high quality devices for fundamental physics research and with functional properties.

CVD Graphene for Electrical Quantum Metrology

Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

Marking the Graphene Era in Disseminating the Redefined SI

Growth Kinetics and Defects of CVD Graphene on Cu

Low-temperature quantum transport in CVD-grown single crystal graphene

Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization

Quantum transport in CVD graphene synthesized with liquid carbon precursor

Giant Magnetoresistance in a Chemical Vapor Deposition Graphene Constriction

Centimeter-scale high-resolution metrology of entire CVD-grown graphene sheets.

Quantum Time-Dependent Monte Carlo Simulation of Electron Devices with 2D Linear-Band Materials: a Genuine TeraHertz Signature for Graphene

Room-Temperature Quantum Hall Effect in Graphene

Nano-Physical Characterization of Chemical Vapor Deposition-Grown Monolayer Graphene for High Performance Electrode: Raman, Surface-Enhanced Raman Spectroscopy, and Electrostatic Force Microscopy Studies

Contrasting Transport Performance of Electron- and Hole-Doped Epitaxial Graphene for Quantum Resistance Metrology

Non-destructive and Rapid Evaluation of CVD Graphene by Dark Field Optical Microscopy

Expansion of Graphene-Based Device Technology for Resistance Metrology

Rapid Large-Scale Characterization of CVD Graphene Layers on Glass Using Fluorescence Quenching Microscopy

High-Temperature Quantum Hall Effect in Graphite-Gated Graphene Heterostructure Devices with High Carrier Mobility

CVD graphene with high electrical conductivity: Empowering applications

Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

Mapping Conductance and Switching Behavior of Graphene Devices In Situ

Characterization of CVD Graphene Permittivity and Conductivity in Micro-/Millimeter Wave Frequency Range