Abstract:Isostructural alloying has been regarded as an important approach to boosting thermoelectric performance of narrow gap semiconductors through thermal conductivity reduction. However, it does harm to carrier mobilities as well because of atomic disorders. Here, we extend the alloying concept from "isostructural" to "quasi-isostructural", which means that the two alloying components are no longer strictly isostructural but structurally closely related. As a proof-of-concept, a series of cubic Cu2SnSe3–tetragonal Cu3SbSe4 quasi-isostructural alloys (Cu2+xSn1–xSbxSe3+x) were synthesized, and their thermoelectric transport properties were systematically studied. No significant loss of carrier mobilities was found during quasi-isostructural alloying, probably due to the structural similarity of the two end members as well as the negligible mass contrasts between Sn and Sb. Surprisingly, a remarkable reduction of lattice thermal conductivity from 1.2 W m–1 K–1 for Cu2SnSe3/Cu3SbSe4 to 0.4 W m–1 K–1 for Cu5SnSbSe7 at 673 K was observed, which can hardly be explained from a solid solution perspective. Our X-ray photoelectron spectroscopy analysis unambiguously demonstrate the coexistence of Sn2+ and Sn4+ in the alloying systems, whereas Sn simply exhibits Sn4+ in Cu2SnSe3. We deduce that the minute structural changes of Cu2SnSe3 during quasi-isostructural alloying make Sn discordant, leading to its valence state splitting. The mixed-valence scattering therefore strongly impedes phonon propagation beyond alloying. Altogether, a considerably enhanced ZT ≈ 0.4 is realized in the sample with x = 0.2, which is 150% improvement over the x = 0 sample. By selecting the x = 0.5 sample as a representative, a preliminary doping study was performed but seems unsuccessful because of the varying Sn2+/Sn4+ ratio. We expect higher thermoelectric performance in those quasi-isostructural alloys if their carrier concentration can be fully optimized.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.1c01155?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.1c01155</a>.Temperature-dependent heat capacity (Cp), thermal diffusivities (D) and Lorenz number (L) for Cu2+xSn1–xSbxSe3+x (x = 0, 0.2, 0.5, 0.8, and 1.0). The longitudinal (νl) and transverse (νt) acoustic velocities, calculation of average acoustic velocity (vs) (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.1c01155/suppl_file/ae1c01155_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Stepwise Alloying in Liquid-like Solid Solutions to Achieve Crystallographic Distortion for Regulating Thermoelectric Transport Behavior

Enhancement of Thermoelectric Performance of Layered SnSe2 by Synergistic Modulation of Carrier Concentration and Suppression of Lattice Thermal Conductivity

Modulating structures to decouple thermoelectric transports leads to high performance in polycrystalline SnSe

Mid-temperature Thermoelectric Performance of Zone-Melted Sb2(Te,Se)3 Alloys Near Phase Transition Boundary

Enhanced Thermoelectric Performance of Quaternary Cu2-2xAg2xSe1-xSx Liquid-like Chalcogenides

Nano-scale Compositional Oscillation and Phase Intergrowth in Cu2S0.5Se0.5 and Their Role in Thermal Transport

Achieving High Thermoelectric Performance in Severely Distorted YbCd2Sb2

Cu2−xS and Cu2−xSe Alloys: Investigating the Influence of Ag, Zn, and Ni Doping on Structure and Transport Behavior

Enhancement of thermoelectric performance of Cu2MnSnSe4 alloys by regulation of lattice strain

Enhanced thermoelectric properties of Cu3SbSe4 via configurational entropy tuning

Maximizing phonon scattering efficiency by Cu 2 Se alloying in AgCuTe thermoelectric materials

Quasi-isostructural Alloying of Cu 2 SnSe 3 –Cu 3 SbSe 4 toward Higher Thermoelectric Performance

High symmetry structure and large strain field fluctuation lead enhancement of thermoelectric performance of quaternary alloys by tuning configurational entropy

Band flattening and phonon-defect scattering in cubic SnSe–AgSbTe2 alloy for thermoelectric enhancement

Enhanced Stability and Thermoelectric Performance in Cu 1.85 Se-Based Compounds

Anionic regulation and valence band convergence boosting the thermoelectric performance of Se-alloyed GeSb 2 Te 4 single crystal

Realizing excellent thermoelectric performance in Ag-doped Cu 2 SnSe 3 -ZnSe solid solution by symmetry modification and stacking promotion

Enhanced Stability and Thermoelectric Performance in Cu<sub>1.85</sub>Se-Based Compounds

Atomic-scale structure and thermoelectric properties in medium-entropy PbSnTeSe alloy

Incommensurately Modulated Structure in AgCuSe‐Based Thermoelectric Materials for Intriguing Electrical, Thermal, and Mechanical Properties

Co-alloying of Sn and Te enables high thermoelectric performance in Ag9GaSe6