Abstract:Flexoelectricity is an electromechanical coupling effect between the polarization and strain gradient in all dielectrics regardless of point group symmetry. Due to its significant influence on material behavior at the nanoscale, the flexoelectric effect has attracted more and more attention in recent years. In this paper, a real space phase field model for the flexoelectric effect in ferroelectric materials is developed by using isogeometric analysis (IGA). The IGA employs the same smooth and high-order basis functions to describe both the geometry of material and the solution of phase field, which is able to give an accurate and efficient description of the flexoelectric effect in ferroelectrics with arbitrary geometrical shapes and boundary conditions. To this end, phase field simulations on the effect of flexoelectricity are conducted for nanoscale ferroelectrics with different geometrical shapes and boundary conditions. The simulation results show that the flexoelectric effect has significant influence on the domain structures and domain switching of ferroelectric materials at the nanoscale. For ferroelectric nanobeam under bending load, due to the flexoelectric effect, the mechanical bending can break the symmetry of hysteresis loop between electric field and polarization. As for ferroelectric nanodots, the flexoelectric effect increases the magnitude of spontaneous polarizations and results in the tilting of polarization vortex. In addition, out-of-plane components appear in the polarization vortex of ferroelectric nanodots due to the flexoelectric effect, which increases the coercive field for the switching of polarization vortex and changes the switching process significantly. The present work not only presents an effective nonlocal model for the domain evolution in ferroelectric materials with the consideration of the flexoelectric effect, but also asymmetric hysteresis loop between polarization and external electric field for ferroelectric beam, and new switching behavior of the polarization vortex in ferroelectric nanodots due to the flexoelectric effect.

Giant flexoelectric effect in ferroelectric epitaxial thin films

Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films

Phase Field Modeling of Flexoelectric Effects in Ferroelectric Epitaxial Thin Films

Giant optical enhancement of strain gradient in ferroelectric thin films and its physics origin

Giant Electrocaloric Effect in Ferroelectric Ultrathin Films at Room Temperature Mediated by Flexoelectric Effect and Work Function

Effect of epitaxial strain on the magneto-electric coupling of YMnO3 thin films

Intrinsic and Quantitative Effects of In-Plane Strain on Ferroelectric Properties of Mn-doped BiFeO3 Epitaxial Films by in Situ Inducing Strain in Substrates

Giant sharp magnetoelectric switching in multiferroic epitaxial La_{0.67}Sr_{0.33}MnO_3 on BaTiO_3

Strain Tunability of Dielectric and Ferroelectric Properties in Epitaxial Lead Titanate Thin Films

Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

Improper flexoelectricity in hexagonal rare-earth ferrites

An Isogeometric Approach to Flexoelectric Effect in Ferroelectric Materials

Effects of flexoelectric polarization on surface potential of dielectric thin-film heterostructures: A comparative study

Giant linear magnetoelectric effect at the morphotropic phase boundary of epitaxial Sr 0.5 Ba 0.5 MnO 3 films

Revealing the Flexoelectricity in the Mixed-Phase Regions of Epitaxial BiFeO3 Thin Films

Significant Modulation of Ferroelectric Photovoltaic Behavior by a Giant Macroscopic Flexoelectric Effect Induced by Strain‐Relaxed Epitaxy

Intrinsic FLexoelectricity of Van Der Waals Epitaxial Thin FIlms

The Evidence of Giant Surface Flexoelectric Field in (111) Oriented Bifeo3 Thin Film

Giant Flexoelectricity in Bent Semiconductor Thinfilm

Multiferroic properties of uniaxially compressed orthorhombic HoMnO3 thin films

Large elasto-optic effect and reversible electrochromism in multiferroic BiFeO3