Abstract:This paper introduces the fundamental concepts and theories of the flexoelectric effect, explores methods to induce it in thin films through optimized growth conditions and external mechanical stresses, and reviews recent advancements in using the effect to modulate ferroelectric domains and enhance properties in photovoltaic systems, nanogenerators, sensors, and actuators. It also briefly discusses the challenges and future prospects of flexoelectric effects in advanced electronics. The flexoelectric effect describes phenomena where strain gradients induce electrical polarization and electric field gradients cause strain in materials. This specific type of electromechanical coupling effect is remarkable for being independent of material symmetry, Curie temperature, and it exhibits notable effects in small‐sized materials. The study of flexoelectric effects has provided fresh insights into materials science, particularly highlighting how thin‐film structures, with their unique geometrical and dimensional attributes, are highly responsive to flexoelectric influences, thereby offering significant opportunities for modulating electrical properties. Herein, this paper presents the fundamental concepts and theories underlying the flexoelectric effect are presented. Various methods for inducing this effect in thin films are explored, including the optimization of growth and deposition conditions, and the application of external mechanical stresses to create strain gradients. Additionally, recent advances in utilizing the flexoelectric effect to modulate ferroelectric domains, modify properties of thin films, and enhance functionalities in photovoltaic systems, nanogenerators, sensors, and actuators are reviewed. Finally, the challenges and future prospects for flexoelectric effects in advanced electronics are briefly presented.

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Disappearance of Ferroelectric Critical Thickness in Epitaxial Ultrathin Bazro3 Films

Effects of Thickness on the Polarization States in Epitaxial Ferroelectric Thin Films

Giant Flexoelectricity in Bent Semiconductor Thinfilm

Giant Apparent Flexoelectricity in Semiconductors Driven by Insulator-to-metal Transition

Giant Flexoelectric Coefficients at Critical Ferroelectric Transition

External Uniform Electric Field Removing the Flexoelectric Effect in Epitaxial Ferroelectric Thin Films

Phase Field Modeling of Flexoelectric Effects in Ferroelectric Epitaxial Thin Films

Significant Modulation of Ferroelectric Photovoltaic Behavior by a Giant Macroscopic Flexoelectric Effect Induced by Strain‐Relaxed Epitaxy

Improper flexoelectricity in hexagonal rare-earth ferrites

Flexo-induced ferroelectricity in low dimensional transition metal dichalcogenides

Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films

Strain coupling of ferroelastic domains and misfit dislocations in [101]-oriented ferroelectric PbTiO3 films

The Evidence of Giant Surface Flexoelectric Field in (111) Oriented Bifeo3 Thin Film