Abstract:Multiferroic heterostructures based on the strain-mediated mechanism present ultralow heat dissipation and large magnetoelectric coupling coefficient, two conditions that require endless improvement for the design of fast nonvolatile random access memories with reduced power consumption. This work shows that a structure consisting of a [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 (001) substrate on which a crystalline FeGa(001)/MgO(001) bilayer is deposited exhibits a giant magnetoelectric coupling coefficient of order 15 × 10–6 s m–1 at room temperature. That result is a 2-fold increment over the previous highest value. The spatial orientation of the magnetization vector in the epitaxial FeGa film is switched 90° with the application of electric field. The symmetry of the magnetic anisotropy is studied by the angular dependence of the remanent magnetization, demonstrating that poling the sample generates a switchable uniaxial magnetoelastic anisotropy in the film that overcomes the native low 4-fold magnetocrystalline anisotropy energy. Magnetic force microscopy shows that the switch of the easy axis activates the displacement of domain walls and the domain structures remain stable after that point. This result highlights the interest in single-crystalline structures including materials with large magnetoelastic coupling and small magnetocrystalline anisotropy for low-energy-consuming spintronic applications.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.0c18777.Methods; heterostructure growth and structural characterization (RHEED, STEM, and AFM measurements); additional data and discussions about MOKE and VSM experiments; αE for a polycrystalline film; demonstration of 180° switching of M with the assistance of magnetic field and the derivation of the magnetic anisotropy energy (PDF)This article has not yet been cited by other publications.

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