Abstract:Background: The extremely fast delivery of doses with ultra high dose rate (UHDR) beams necessitates the investigation of novel approaches for real‐time dosimetry and beam monitoring. This aspect is fundamental in the perspective of the clinical application of FLASH radiotherapy (FLASH‐RT), as conventional dosimeters tend to saturate at such extreme dose rates. Purpose: This study aims to experimentally characterize newly developed silicon carbide (SiC) detectors of various active volumes at UHDRs and systematically assesses their response to establish their suitability for dosimetry in FLASH‐RT. Methods: SiC PiN junction detectors, recently realized and provided by STLab company, with different active areas (ranging from 4.5 to 10 mm2) and thicknesses (10–20 μm), were irradiated using 9 MeV UHDR pulsed electron beams accelerated by the ElectronFLASH linac at the Centro Pisano for FLASH Radiotherapy (CPFR). The linearity of the SiC response as a function of the delivered dose per pulse (DPP), which in turn corresponds to a specific instantaneous dose rate, was studied under various experimental conditions by measuring the produced charge within the SiC active layer with an electrometer. Due to the extremely high peak currents, an external customized electronic RC circuit was built and used in conjunction with the electrometer to avoid saturation. Results: The study revealed a linear response for the different SiC detectors employed up to 21 Gy/pulse for SiC detectors with 4.5 mm2/10 μm active area and thickness. These values correspond to a maximum instantaneous dose rate of 5.5 MGy/s and are indicative of the maximum achievable monitored DPP and instantaneous dose rate of the linac used during the measurements. Conclusions: The results clearly demonstrate that the developed devices exhibit a dose‐rate independent response even under extreme instantaneous dose rates and dose per pulse values. A systematic study of the SiC response was also performed as a function of the applied voltage bias, demonstrating the reliability of these dosimeters with UHDR also without any applied voltage. This demonstrates the great potential of SiC detectors for accurate dosimetry in the context of FLASH‐RT.

SiC based beam monitoring system for particle rates from kHz to GHz

SiC Based Beam Monitoring System for Particle Rates from kHz to GHz

4H-Silicon Carbide as particle detector for high-intensity ion beams

Development of a silicon carbide radiation detection system and experimentation of the system performance

Silicon carbide detectors for dosimetry and monitoring of ultra-high dose rate beams

Characterisation of SiC radiation detector technologies with synchrotron X-rays

Front End Electronics for Radiation Detectors Based on SiC: Application to High Dose per Pulse Charged Particle Beam Current Measurement

Detection resolving power of SiC Timepix3 detector to electrons, neutrons, ions and protons

State-of-the-art silicon carbide diode dosimeters for ultra-high dose-per-pulse radiation at FLASH radiotherapy

High-precision CSNS Beam Monitor System Conceptual Design Based on SiC

A Beam Monitor for Ion Beam Therapy Based on HV-CMOS Pixel Detectors

SiC Measurements of Electron Energy by fs Laser Irradiation of Thin Foils

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Monolithic HV-CMOS sensors for a beam monitoring system of therapeutic ion beams

Comprehensive dosimetric characterization of novel silicon carbide detectors with UHDR electron beams for FLASH radiotherapy

Silicon Carbide Timepix3 detector for quantum-imaging detection and spectral tracking of charged particles in wide range of energy and field-of-view

Amorphous silicon detectors for proton beam monitoring in FLASH radiotherapy

An Instrument for Precision Controlled Radiation Exposures, Charged Beam Profile Measurement, and Real-time Fluence Monitoring Beyond $10^{16}$ n$_{\textrm{eq}}$/cm$^{2}$

High precision proton beam monitor system concept design on CSNS based on SiC

Silicon solid-state detectors for monitoring high-energy accelerator mixed field radiation environments

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation