Quasi-two-dimensional heterostructures (K$M_{1-x}$Te)(LaTe$_{3}$) ($M$ = Mn, Zn) with charge density waves

Jin-Ke Bao,Christos D. Malliakas,Chi Zhang,Songting Cai,Haijie Chen,Alexander J. E. Rettie,Brandon L. Fisher,Duck Young Chung,Vinayak P. Dravid,Mercouri G. Kanatzidis

DOI: https://doi.org/10.1021/acs.chemmater.0c04923

2021-04-16

Abstract:Layered heterostructure materials with two different functional building blocks can teach us about emergent physical properties and phenomena arising from interactions between the layers. We report the intergrowth compounds KLa$M$$_{1-x}$Te$_{4}$ ($M$ = Mn, Zn; $x\approx$ 0.35) featuring two chemically distinct alternating layers [LaTe$_3$] and [K$M$$_{1-x}$Te]. Their crystal structures are incommensurate, determined by single X-ray diffraction for the Mn compound and transmission electron microscope (TEM) study for the Zn compound. KLaMn$_{1-x}$Te$_{4}$ crystallizes in the orthorhombic superspace group $Pmnm$(01/2${\gamma}$)$s$00 with lattice parameters $a$ = 4.4815(3) Å, $b$ = 21.6649(16) Å and $c$ = 4.5220(3) Å. It exhibits charge density wave (CDW) order at room temperature with a modulation wave vector $\mathbf{q}$ = 1/2$\mathbf{b}$* + 0.3478$\mathbf{c}$* originating from electronic instability of Te-square nets in [LaTe$_{3}$] layers. The Mn analog exhibits a cluster spin glass behavior with spin freezing temperature $T_{\mathrm{f}}$ $\approx$ 5 K attributed to disordered Mn vacancies and competing magnetic interactions in the [Mn$_{1-x}$Te] layers. The Zn analog also has charge density wave order at room temperature with a similar $\mathbf{q}$-vector having the $\mathbf{c}$* component ~ 0.346 confirmed by selected-area electron diffraction (SAED). Electron transfer from [K$M_{1-x}$Te] to [LaTe$_{3}$] layers exists in KLa$M_{1-x}$Te$_{4}$, leading to an enhanced electronic specific heat coefficient. The resistivities of KLa$M_{1-x}$Te$_{4}$ ($M$ = Mn, Zn) exhibit metallic behavior at high temperatures and an upturn at low temperatures, suggesting partial localization of carriers in the [LaTe$_{3}$] layers with some degree of disorder associated with the $M$ atom vacancies in the [$M_{1-x}$Te] layers.

Materials Science