Quasi-Two-Dimensional Heterostructures (K M 1 – x Te)(LaTe 3 ) ( M = Mn and Zn) with Charge Density Waves

Jin-Ke Bao,Christos D. Malliakas,Chi Zhang,Songting Cai,Haijie Chen,Alexander J. E. Rettie,Brandon L. Fisher,Duck Young Chung,Vinayak P. Dravid,Mercouri G. Kanatzidis

DOI: https://doi.org/10.1021/acs.chemmater.0c04923

IF: 10.508

2021-03-08

Chemistry of Materials

Abstract:Layered heterostructure materials with two different functional building blocks can teach us about emergent physical properties and phenomena arising from interactions between the layers. We report intergrowth compounds KLa<i>M</i>_{1 – <i>x</i>}Te₄ (<i>M</i> = Mn and Zn; <i>x</i> ≈ 0.35) featuring two chemically distinct alternating layers [LaTe₃] and [K<i>M</i>_{1 – <i>x</i>}Te]. Their crystal structures are incommensurate, determined by single X-ray diffraction for the Mn compound and a transmission electron microscope study for the Zn compound. KLaMn_{1 – <i>x</i>}Te₄ crystallizes in the orthorhombic superspace group <i>Pmnm</i>(01/2γ)<i>s</i>00 with lattice parameters <i>a</i> = 4.4815(3) Å, <i>b</i> = 21.6649(16) Å, and <i>c</i> = 4.5220(3) Å. It exhibits charge density wave order at room temperature with a modulation wave vector <b>q</b> = 1/2<b>b</b>* + 0.3478<b>c</b>* originating from electronic instability of Te-square nets in [LaTe₃] layers. The Mn analog exhibits a cluster spin glass behavior with spin freezing temperature <i>T</i>_f ≈ 5 K attributed to disordered Mn vacancies and competing magnetic interactions in the [Mn_{1 – <i>x</i>}Te] layers. The Zn analog also has charge density wave order at room temperature with a similar <b>q</b>-vector having the <b>c</b>* component ∼0.346 confirmed by selected-area electron diffraction. Electron transfer from [K<i>M</i>_{1 – <i>x</i>}Te] to [LaTe₃] layers exists in KLa<i>M</i>_{1 – <i>x</i>}Te₄, leading to an enhanced electronic specific heat coefficient. The resistivities of KLa<i>M</i>_{1 – <i>x</i>}Te₄ (<i>M</i> = Mn and Zn) exhibit metallic behavior at high temperatures and an upturn at low temperatures, suggesting partial localization of carriers in the [LaTe₃] layers with some degree of disorder associated with the <i>M</i> atom vacancies in the [<i>M</i>_{1 – <i>x</i>}Te] layers.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.chemmater.0c04923?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.chemmater.0c04923</a>.(Figure S1) PXRD experimental patterns of polycrystalline samples of KLaMn_{1 – <i>x</i>}Te₄ and KLaZn_{1 – <i>x</i>}Te₄ and their simulated patterns of KLaMn_{1 – <i>x</i>}Te₄ and MnTe₂; (Figure S2) PXRD pattern of KLaZn_{1 – <i>x</i>}Te₄ samples exposed in air for two days and the simulated pattern of the Te element; (Figure S3) energy-dispersive spectroscopy (EDS) data of KLaMn_{1 – <i>x</i>}Te₄; (Figure S4) specific heat data of two KLaMn_{1 – <i>x</i>}Te₄ and two KLaZn_{1 – <i>x</i>}Te₄ samples; (Figure S5) electric contacts created by Pt sputtering and silver paste for transport property measurements; (Figure S6) magnetic susceptibility from another batch of KLaMn_{1 – <i>x</i>}Te₄ polycrystalline samples; (Figure S7) high-angle annular dark-field image and its corresponding EDS mapping of KLaZn_{1 – <i>x</i>}Te₄; (Figure S8 ) a plot of ln(ρ) vs 1/T for resistivity; (Tables S1–S5) detailed modulation structure parameters of KLaMn_{1 – <i>x</i>}Te₄; experimental details of charge transport property, energy-dispersive X-ray spectroscopy, and scanning and transmission electron microscopy measurements (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.0c04923/suppl_file/cm0c04923_si_001.pdf">PDF</a>)Cif file of the modulated structure (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.0c04923/suppl_file/cm0c04923_si_002.cif">CIF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical