Quantum anomalous Hall effect in MnBi₂Te₄ van der Waals heterostructures

Ruiling Gao,Guanhua Qin,Shifei Qi,Zhenhua Qiao,Wei Ren

DOI: https://doi.org/10.1103/PhysRevMaterials.5.114201

IF: 3.98

2021-01-01

Physical Review Materials

Abstract:Quantum anomalous Hall effect (QAHE) has been experimentally realized in the intrinsic antiferromagnetic topological insulator MnBi2Te4. However, at ambient condition the magnetization of the MnBi2Te4 sample decreases significantly after it is exposed in air for a couple of days, which hinders its potential application. Here, we theoretically propose to cover 2D van der Waals materials such as hexagonal boron nitride (h-BN) monolayer onto the surface of MnBi2Te4. This not only protects the stability of MnBi2Te4, but also leads to interlayer ferromagnetic coupling and further realizes the QAHE at higher temperature. We find that interlayer ferromagnetic transition occurs generally when monolayer h-BN, MoS2, or WSe2 is covered onto two or three septuple-layer MnBi2Te4 with interlayer antiferromagnetic coupling. Band-structure and topological properties calculations show that h-BN/MnBi2Te4 heterostructure exhibits a topologically nontrivial band gap around 64-75 meV, hosting QAHE with a Chern number of C = 1. Our proposed materials system should be considered as an ideal platform to explore high-temperature QAHE due to their relatively simple and stable structures.