Spin torque gate magnetic field sensor

Hang Xie,Xin Chen,Ziyan Luo,Yihong Wu

DOI: https://doi.org/10.1103/PhysRevApplied.15.024041

2020-10-14

Abstract:Spin-orbit torque provides an efficient pathway to manipulate the magnetic state and magnetization dynamics of magnetic materials, which is crucial for energy-efficient operation of a variety of spintronic devices such as magnetic memory, logic, oscillator, and neuromorphic computing. Here, we describe and experimentally demonstrate a strategy for the realization of a spin torque gate magnetic field sensor with extremely simple structure by exploiting the longitudinal field dependence of the spin torque driven magnetization switching. Unlike most magnetoresistance sensors which require a delicate magnetic bias to achieve a linear response to the external field, the spin torque gate sensor can achieve the same without any magnetic bias, which greatly simplifies the sensor structure. Furthermore, by driving the sensor using an ac current, the dc offset is automatically suppressed, which eliminates the need for a bridge or compensation circuit. We verify the concept using the newly developed WTe2/Ti/CoFeB trilayer and demonstrate that the sensor can work linearly in the range of 3-10 Oe with negligible dc offset.

Mesoscale and Nanoscale Physics,Applied Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop a simple and efficient magnetic sensor to achieve a linear response to an external magnetic field while avoiding the complex bias magnetic fields and compensation circuits required by traditional magnetoresistive sensors. Specifically, the paper proposes and experimentally verifies a new type of magnetic sensor based on spin - orbit torque (SOT), namely the Spin Torque Gate (STG) magnetic sensor.

### Main problems and solutions

1. **Limitations of traditional magnetoresistive sensors**:
- Traditional magnetoresistive sensors (such as anisotropic magnetoresistive, giant magnetoresistive, and tunneling magnetoresistive sensors) require precise magnetic biasing to achieve a linear response to an external magnetic field.
- This magnetic biasing increases the complexity and cost of the sensor structure and usually requires bridge or compensation circuits to eliminate the DC offset.

2. **Advantages of STG magnetic sensors**:
- **No magnetic biasing required**: By taking advantage of the dependence of SOT - driven magnetization reversal on the applied longitudinal magnetic field, the STG sensor can operate without an external bias magnetic field.
- **Automatic DC offset suppression**: When the sensor is driven by an alternating current, the DC offset is automatically suppressed, thus eliminating the need for bridge or compensation circuits.
- **Simple structure**: The STG sensor has a very simple structure, such as a simple Hall bar structure, making its fabrication and application more convenient.

3. **Experimental verification**:
- The paper uses a WTe₂/Ti/CoFeB three - layer structure as an experimental platform and shows the linear response of the STG sensor in the range of ±3 - 10 Oe with almost no DC offset.
- The experimental results indicate that the STG sensor performs excellently in terms of linearity, sensitivity, and noise suppression and has broad application prospects, especially in the field of position sensing such as angle detection.

### Explanation of mathematical formulas

The key formulas describe the working principle of the STG sensor:

- **Critical current density**:
\[
J_c=\sqrt{\frac{2e}{\hbar M_s t_{FM}}\theta_{SH}(H_k^{eff}\sqrt{2}-|H_x|)}
\]
where \( M_s \) is the saturation magnetization of the ferromagnetic layer, \( t_{FM} \) is the thickness of the ferromagnetic layer, \( H_k^{eff} \) is the effective anisotropy field, \( \theta_{SH} \) is the effective spin - Hall angle, \( H_x \) is the longitudinal magnetic field along the current direction, \( e \) is the electron charge, and \( \hbar \) is the reduced Planck constant.

- **Output voltage**:
For alternating currents with different waveforms, the expression for the output voltage \( V_{out} \) is as follows:
\[
V_{out}=
\begin{cases}
\frac{\sqrt{2}R_{AHE}S}{\pi^2 e\hbar M_s t_{FM}\theta_{SH}}\text{sgn}(H_x)\sqrt{\sqrt{2}H_k^{eff}|H_x|}, & \text{sine wave} \\
\frac{R_{AHE}S}{2\sqrt{2}e\hbar M_s t_{FM}\theta_{SH}}H_x, & \text{sawtooth wave} \\
\frac{R_{AHE}S}{2\sqrt{2}e\hbar M_s t_{FM}\theta_{SH}}H_x, & \text{triangle wave}
\end{cases}
\]
where \( R_{AHE} \) is the magnitude of the anomalous Hall effect resistance and \( S \) is the cross - sectional area of the device.

### Conclusion

Through the above research, the paper successfully proposes and verifies a new type of magnetic sensor based on spin - orbit torque. This sensor not only has a simple structure but also has excellent performance.