Abstract:Tuning band gaps in two-dimensional (2D) materials is of great interest for the fundamental and practical aspects of contemporary material sciences. Recently, black phosphorus (BP) consisting of stacked layers of phosphorene was experimentally observed to show a widely tunable band gap by means of the deposition of potassium (K) atoms on the surface, thereby allowing great flexibility in the design and optimization of electronic and optoelectronic devices. Here, based on density-functional theory calculations, we demonstrates that the donated electrons from K dopants are mostly localized in the topmost BP layer and this surface charging efficiently screens the K ion potential. It is found that, as the K doping increases, the extreme surface charging and its screening of K atoms shift the conduction bands down in energy, i.e., towards a higher binding energy, because they have more charge near the surface, while it has little influence on the valence bands having more charge in the deeper layers. This result provides a different explanation for the observed tunable band gap compared to the previously proposed giant Stark effect where a vertical electric field from the positively ionized K overlayer to the negatively charged BP layers shifts the conduction band minimum Γ1c (valence band minimum Γ8v) downwards (upwards). The present prediction of Γ1c and Γ8v as a function of the K doping reproduces well the widely tunable band gap, anisotropic Dirac semimetal state, and band-inverted semimetal state, as observed in an angle-resolved photoemission spectroscopy experiment. Our findings shed new light on a route for tunable band gap engineering of 2D materials through the surface doping of alkali metals.

Isotropic or anisotropic screening in black phosphorous: can doping tip the balance?

Isotropic charge screening of the anisotropic black phosphorus revealed by potassium adatoms

Isotropic Charge Screening of Anisotropic Black Phosphorus Revealed by Potassium Adatoms

Screening And Plasmons In Pure And Disordered Single- And Bilayer Black Phosphorus

Microscopic mechanism of the tunable band gap in potassium-doped few-layer black phosphorus

In-Plane Uniaxial Strain in Black Phosphorus Enables the Identification of Crystalline Orientation.

Surface and interface control of black phosphorus

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Resolving the Spatial Structures of Bound Hole States in Black Phosphorus

Revealing the Origins of 3d Anisotropic Thermal Conductivities of Black Phosphorus

Toward a Realistic Description of Multilayer Black Phosphorus: FromGWapproximation to Large-Scale Tight-Binding Simulations

Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics

Optical Anisotropy of Few-Layer Black Phosphorus Visualized by Scanning Polarization Modulation Microscopy

Gate-Tunable Giant Stark Effect in Few-Layer Black Phosphorus

Anisotropic Charge Carrier and Coherent Acoustic Phonon Dynamics of Black Phosphorus Studied by Transient Absorption Microscopy

Dynamical Anisotropic Response Of Black Phosphorus Under Magnetic Field

Black phosphorus nanostructures: recent advances in hybridization, doping and functionalization.

Black Phosphorus: Revealing the Origins of 3D Anisotropic Thermal Conductivities of Black Phosphorus (adv. Electron. Mater. 5/2016)

Spatial-Temporal Imaging of Anisotropic Photocarrier Dynamics in Black Phosphorus

Emergence of Two-Dimensional Massless Dirac Fermions, Chiral Pseudospins, and Berry's Phase in Potassium Doped Few-Layer Black Phosphorus

Anisotropic band evolution of bulk black phosphorus induced by the uniaxial tensile strain