Abstract:Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize modulation doping, where the ionized dopants are physically separated from the 2DES channel. The doping-well structure augments modulation doping by providing additional screening for all types of charged impurities in the vicinity of the 2DES, which is necessary to achieve record-breaking samples. Despite its prevalence in the design of ultra-high-mobility 2DESs, the working principles of the doping-well structure have not been reported. Here we elaborate on the mechanics of electron transfer from doping wells to the 2DES, focusing on GaAs/AlGaAs samples grown by molecular beam epitaxy. Based on this understanding we demonstrate how structural parameters in the doping well can be varied to tune the properties of the 2DES.

What problem does this paper attempt to address?

This paper aims to explore and explain the working principle of the Doping Well Structure (DWS) for high - mobility two - dimensional electron systems (2DESs). Specifically, the paper focuses on how to regulate the properties of 2DES, especially the electron density, by adjusting various parameters in the DWS. These parameters include doping concentration, cladding well width, and cladding well alloy composition, etc. ### Background In heterostructures, in order to achieve a high - mobility 2DES, the modulation doping technique is usually adopted, that is, the ionized dopants are physically separated from the 2DES channel. The DWS further enhances the effect of this modulation doping. By providing additional shielding, it reduces the influence of all types of charged impurities near 2DES, thus achieving record - level sample quality. Although DWS is very common in the design of ultra - high - quality 2DES, its working principle has not been reported in detail yet. ### Research Content The paper first reviews the standard modulation doping process and then describes in detail the electron transfer mechanism in DWS. In DWS, dopants are placed in a narrow quantum well instead of in the barrier. DWS uses the energy level difference between the narrow quantum well and the wide quantum well to transfer electrons to the 2DES channel. In addition, DWS also contains additional cladding wells. These cladding wells can accommodate electrons to shield the electric field from dopants and other residual impurities, further reducing electron scattering events in 2DES. ### Experimental Results The paper experimentally verifies the hypothesis of electron transfer in DWS. The main findings include: 1. **Influence of Doping Concentration**: Increasing the doping concentration in the doping well will increase the quasi - Fermi level (\( E_F \)), and then increase the electron density of 2DES. 2. **Influence of Cladding Well Width**: Increasing the width of the cladding well will reduce its ground - state energy (\( E_0 \)), thereby reducing the quasi - Fermi level and reducing the electron density of 2DES. 3. **Influence of Cladding Well Alloy Composition**: Changing the alloy composition of the cladding well (such as increasing the Ga content) can raise its conduction - band minimum, thereby increasing the quasi - Fermi level and increasing the electron density of 2DES. ### Conclusion By adjusting the doping concentration, cladding well width, and cladding well alloy composition in DWS, the electron density of 2DES can be widely adjusted while maintaining a fixed spacer layer thickness and maintaining ultra - high sample quality. These findings are applicable not only to the GaAs/AlGaAs system but also can be extended to other epitaxially grown 2DES with similar conduction - band characteristics. In summary, this paper provides a detailed explanation of the working principle of DWS and shows how to optimize the performance of 2DES by adjusting structural parameters, which is of great significance for the design and preparation of high - quality 2DES.

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