Thin Film Resistance Gating by Redox Charge Exchange: Evidence for a Quantum Transition State

Xiaoyang Chen,Al-Amin Dhirani
DOI: https://doi.org/10.1021/acsami.4c02058
IF: 9.5
2024-05-07
ACS Applied Materials & Interfaces
Abstract:Field effect transistors (FETs) and related devices have enabled tremendous advances in electronics, as well as studies of fundamental phenomena. FETs are classically actuated as fields charge/discharge materials, thereby modifying their resistance. Here, we develop charge exchange transistors (CETs) that comprise thin films whose resistance is modified by quantum charge exchange processes, e.g., redox and bonding. We first use CETs to probe the metallocene-thin film interaction during cyclic...
materials science, multidisciplinary,nanoscience & nanotechnology
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