Radical n-p Conduction Switching and Significant Photoconductivity Enhancement in NbOI 2 via Pressure-Modulated Peierls Distortion

Lei Yue,Zonglun Li,Linchao Yu,Kunbo Xu,Ran Liu,Chenyi Li,Yanchun Li,Dongliang Yang,Xiaodong Li,Quanjun Li,Bingbing Liu
DOI: https://doi.org/10.1021/jacs.4c09361
IF: 15
2024-08-31
Journal of the American Chemical Society
Abstract:The absence of intrinsic p-type 2D layered semiconductors has hampered the development of 2D devices, particularly in complementary metal-oxide-semiconductor (CMOS) devices and integrated circuits. Developing practical p-type semiconductors and advanced modulation techniques for precise carrier control is paramount to advancing electronic devices and systems. Here, by applying pressure to continuously tune the Peierls distortion in NbOI(2), we effectively control the polarity and concentration...
chemistry, multidisciplinary
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