Abstract:We investigate the stability of the effective lifetime τeff and the recombination current density parameter J0 in n-type silicon samples with symmetric phosphorus doped poly-Si/SiOx structures, and identify factors that contribute to the passivation degradation behavior. It is found that the surface passivation quality of phosphorus doped polysilicon passivating contacts degrades upon dark annealing and light soaking at temperatures between 75 °C and 200 °C, which can lead to a pronounced increase of the recombination current density parameter J0 (one-side) from below 10 fA/cm2 to 50 fA/cm2 or above. The degradation is only detected on fired wafers, whereas the surface passivation quality is found to be stable in the non-fired sister samples. Surprisingly, a recovery of τeff and J0 is observed after the degradation. The degradation and regeneration behaviors depend strongly on temperature and light intensity, and the presence of silicon nitride (SiNx) capping layers during the light soaking. Increasing the annealing temperature dramatically increases the rate of the degradation and the regeneration process, and at the same time reduces the magnitude of the degradation. The regeneration process appears to be affected by the presence of SiNx films during the light soaking treatment. Samples with SiNx films removed after firing suffer a significantly larger degradation upon light soaking without any lifetime regeneration. Grazing incidence X-ray diffraction measurements reveal negligible change in the structural property and crystalline quality of the polysilicon layer during the degradation.

EFFECTIVE LIFETIME CHARACTERISATION OF A ROOM TEMPERATURE META-STABLE DEFECT IN N-TYPE 5 ΩCM FZ PHOSPHORUS-DIFFUSED OXIDE-PASSIVATED SILICON

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Electrical characterization of the slow boron oxygen defect component in Czochralski silicon

Thermal stability of defects in plastically deformed silicon studied by positron lifetime spectroscopy

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

EFFECT OF VARIABLE TEMPERATURE PHOSPHOROUS GETTERING TREATMENTS ON THE PERFORMANCE OF MULTICRYSTALLINE SILICON

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Evolution of secondary defects in arsenic implanted Si

Microdefects in Heavily Phosphorus-Doped Czochralski Silicon

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Long-term stability study of the passivation quality of polysilicon-based passivation layers for silicon solar cells

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Defect-Related Electroluminescence in the 1.2–1.7 Μm Range from Boron-Implanted Silicon at Room Temperature

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

Dry Etch Damage in N-Type Crystalline Silicon Wafers Assessed by Deep-Level Transient Spectroscopy and Minority Carrier Lifetime

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs