Controlling photocurrent direction with light

Ya Yang

DOI: https://doi.org/10.1038/s41928-021-00647-0

IF: 33.255

2021-09-01

Nature Electronics

Abstract:Nature Electronics, Published online: 23 September 2021; doi:10.1038/s41928-021-00647-0The direction of photocurrent in a p–n heterojunction device can be switched by using different wavelengths of light.

engineering, electrical & electronic

What problem does this paper attempt to address?

Bidirectional photocurrent in p–n heterojunction nanowires

Danhao Wang,Xin Liu,Yang Kang,Xiaoning Wang,Yuanpeng Wu,Shi Fang,Huabin Yu,Muhammad Hunain Memon,Haochen Zhang,Wei Hu,Zetian Mi,Lan Fu,Haiding Sun,Shibing Long

DOI: https://doi.org/10.1038/s41928-021-00640-7

IF: 33.255

2021-09-01

Nature Electronics

Abstract:Nature Electronics, Published online: 23 September 2021; doi:10.1038/s41928-021-00640-7A light-detection electrochemical cell that is based on vertically aligned p–n heterojunction nanowires in an electrolyte environment can exhibit a photoresponse in which the polarity is reversed depending on the wavelength of light.

engineering, electrical & electronic
Switching Electron Current In A Semiconductor Nanowire Via Controlling The Carrier Injection From The Electrode

c h jin,z y zhang,j y wang,qianqian chen,l m peng

DOI: https://doi.org/10.1063/1.2392985

IF: 4

2006-01-01

Applied Physics Letters

Abstract:Well characterized in situ electron field-emission measurements have been made on individual ZnO nanowires (NWs) inside a transmission electron microscope. It is found that the electron field-emission current from a semiconductor NW is determined not only by the NW/vacuum interface, but also by the Schottky barrier formed at the electrode/NW interface. It is demonstrated that the electron injection efficiency through the Schottky barrier and therefore the final electron emission current can be modulated by electronic excitations in the metal electrode, and it is proposed that this phenomenon could be used to design Schottky barrier switches for nanoelectronics. (c) 2006 American Institute of Physics.
Polarization-induced photocurrent switching effect in heterojunction photodiodes

Dingbo Chen,Yu-Chang Chen,Guang Zeng,Yu-Chun Li,Xiao-Xi Li,Dong Li,Chao Shen,Nan Chi,Boon S. Ooi,David Wei Zhang,Hong-Liang Lu

DOI: https://doi.org/10.1007/s12274-022-5086-8

IF: 9.9

2022-11-15

Nano Research

Abstract:The unipolar photocurrent in conventional photodiodes (PDs) based on photovoltaic effect limits the output modes and potential versatility of these devices in photodetection. Bipolar photodiodes with photocurrent switching are emerging as a promising solution for obtaining photoelectric devices with unique and attractive functions, such as optical logic operation. Here, we design an all-solid-state chip-scale ultraviolet (UV) PD based on a hybrid GaN heterojunction with engineered bipolar polarized electric field. By introducing the polarization-induced photocurrent switching effect, the photocurrent direction can be switched in response to the wavelength of incident light at 0 V bias. In particular, the photocurrent direction exhibits negative when the irradiation wavelength is less than 315 nm, but positive when the wavelength is longer than 315 nm. The device shows a responsivity of up to −6.7 mA/W at 300 nm and 5.3 mA/W at 340 nm, respectively. In particular, three special logic gates in response to different dual UV light inputs are demonstrated via a single bipolar PD, which may be beneficial for future multifunctional UV photonic integrated devices and systems.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Dual-polarity Photocurrent of MBE-grown P-Algan/n-gan P–n Nanowires

Danhao Wang,Yang Kang,Xin Liu,Shi Fang,Yuanmin Luo,Xiyu Sun,Haiding Sun

DOI: https://doi.org/10.1364/cleo_si.2022.sf1d.5

2022-01-01

Abstract:We observed bidirectional photocurrent behavior in p-AlGaN/n-GaN nanowire p-n heterojunction, enabling a fast way to distinguish different spectral bands by simply verifying the polarity of photocurrent and its magnitude.
Hybrid Semiconductor Electrodes For Light-Driven Photoelectrochemical Switches

Min-Ce Long,Radim Beranek,Wei-Min Cai,Horst Kisch

DOI: https://doi.org/10.1016/j.electacta.2008.01.077

IF: 6.6

2008-01-01

Electrochimica Acta

Abstract:Hybrid (n-/p-type) semiconductor electrodes represent a viable strategy for fabrication of wavelength-controlled optoelectronic switches. Four hybrid electrodes (BiVO4/Co3O4, BiVO4/CuO, TiO2/Co3O4, TiO2/CuO) were prepared in the form of random assemblies of nanocrystalline powders on ITO-glass and the wavelength dependence of their photocurrent response was investigated. The former three electrodes exhibited wavelength-control led switching of photocurrent direction, whereas the latter one showed exclusively cathodic photocurrents. The prerequisite for the switching effect is that the potentials of the valence and conduction band edges of an n-type component are more positive than those of a p-type one. Further key parameters influencing the photocurrent response are the applied potential and the presence of electron and hole scavengers. (C) 2008 Elsevier Ltd. All rights reserved.
Photovoltage‐Competing Dynamics in Photoelectrochemical Devices: Achieving Self‐Powered Spectrally Distinctive Photodetection

Xin Liu,Danhao Wang,Yang Kang,Shi Fang,Huabin Yu,Haochen Zhang,Muhammad Hunain Memon,Jr‐Hau He,Boon S. Ooi,Haiding Sun,Shibing Long

DOI: https://doi.org/10.1002/adfm.202104515

IF: 19

2021-10-22

Advanced Functional Materials

Abstract:Abstract Multiple‐band and spectrally distinctive photodetection play critical roles in building next‐generation colorful imaging, spectroscopy, artificial vision, and optically controlled logic circuits of the future. Unfortunately, it remains challenging for conventional semiconductor photodetectors to distinguish different spectrum bands with photon energy above the bandgap of the material. Herein, for the first time, a photocurrent polarity‐switchable photoelectrochemical device composed of group III‐nitride semiconductors, demonstrating a positive photocurrent density of 10.54 µA cm −2 upon 254 nm illumination and a negative photocurrent density of −0.08 µA cm −2 under 365 nm illumination without external power supply, is constructed. Such bidirectional photocurrent behavior arises from the photovoltage‐competing dynamics across two photoelectrodes. Importantly, a significant boost of the photocurrent and corresponding responsivity under 365 nm illumination can be achieved after decorating the counter electrode of n‐type AlGaN nanowires with platinum (Pt) nanoparticles, which promote a more efficient redox reaction in the device. It is envisioned that the photocurrent polarity‐switch behavior offers new routes to build multiple‐band photodetection devices for complex light‐induced sensing systems, covering a wide spectrum band from deep ultraviolet to infrared, by simply engineering the bandgaps of semiconductors.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
A Novel Energy-Dependent P-Semiconductor–metal–n-semiconductor Heterojunction for Selectively Steering Charge Flow in a Z-scheme Photocatalyst

Xiyu Li,Mesfin Eshete,Xin Li,Tian Xie,Guozhen Zhang,Liyan Xie,Chuanyi Jia,Yi Luo,Jun Jiang

DOI: https://doi.org/10.1039/c9ta03482j

IF: 11.9

2019-01-01

Journal of Materials Chemistry A

Abstract:The synergistic effect of two interfacial junctions of a p–m–n composite was indicated to enable energy-dependent charge-flow steering for photocatalysis.
Light-modulated Vertical Heterojunction Phototransistors with Distinct Logical Photocurrents

Jiayue Han,Meiyu He,Ming Yang,Qi Han,Fang Wang,Fang Zhong,Mengjian Xu,Qing Li,He Zhu,Chongxin Shan,Weida Hu,Xiaoqing Chen,Xinran Wang,Jun Gou,Zhiming Wu,Jun Wang

DOI: https://doi.org/10.1038/s41377-020-00406-4

2020-01-01

Light Science & Applications

Abstract:The intriguing carrier dynamics in graphene heterojunctions have stimulated great interest in modulating the optoelectronic features to realize high-performance photodetectors. However, for most phototransistors, the photoresponse characteristics are modulated with an electrical gate or a static field. In this paper, we demonstrate a graphene/C 60 /pentacene vertical phototransistor to tune both the photoresponse time and photocurrent based on light modulation. By exploiting the power-dependent multiple states of the photocurrent, remarkable logical photocurrent switching under infrared light modulation occurs in a thick C 60 layer (11 nm) device, which implies competition of the photogenerated carriers between graphene/C 60 and C 60 /pentacene. Meanwhile, we observe a complete positive-negative alternating process under continuous 405 nm irradiation. Furthermore, infrared light modulation of a thin C 60 (5 nm) device results in a photoresponsivity improvement from 3425 A/W up to 7673 A/W, and we clearly probe the primary reason for the distinct modulation results between the 5 and 11 nm C 60 devices. In addition, the tuneable bandwidth of the infrared response from 10 to 3 × 10 3 Hz under visible light modulation is explored. Such distinct types of optical modulation phenomena and logical photocurrent inversion characteristics pave the way for future tuneable logical photocurrent switching devices and high-performance phototransistors with vertical graphene heterojunction structures.
Photocatalytic And Photoelectrochemical Properties Of P-N Heterojunction Composites

Mingce Long,Weimin Cai

2010-01-01

Abstract:Developing solar spectrum matching, highly effective and stable photocatalysts is crucial for photocatalytical conversion solar energy by semiconductor materials. The surface and interface properties of the semiconductor photocatalysts exert very important influence on the behavior of the photogenerated carriers. Through rationally modifying the surface of the photocatalytic particles and fabricating p-n heterojunctions, photocatalytic activity can be significantly enhanced. A p-n heterojunction composite with p-type Co3O4 dispersed on the surface of n-type BiVO4 exhibits enhanced photocatalytic activity for phenol degradation under visible light irradiation. PL spectra, flat band potential and the visible light induced photoelectrochemical properties have been investigated to explore the mechanism on the enhanced photocatalytic activity. The results from the photocurrent decay and the effects of reduction additives supported the assumption that the photogenerated charges are efficiently separated at the n-BiVO4/p-Co3O4 interface. Moreover, Hybrid (n-/p-type) semiconductor electrodes represent a viable strategy for fabrication of wavelength-controlled optoelectronic switches. It is prerequisite that both valence and conduction band edges of an n-type component are more positive than those of a p-type one. Further key parameters influencing the photocurrent response are the applied potential and the presence of electron or hole scavengers. The photocurrent switch behavior is controllable by optimizing all these parameters. Studies on the charge transfer mechanism at the interface of p-n heterostructures is significant in understanding the basic process of photocatalysis and photoelectrochemistry, and helping provide potential strategies for developing novel light-driven function materials.
Polarization-direction-controlled Z-scheme photocatalytic switch in heterostructures: A first-principles study

Yu Zhang,Yanqing Shen,Lingling Lv,Min Zhou,Xin Yang,Xianghui Meng,Nan Zhang,Kexin Wang,Bing Zhang,Zhongxiang Zhou

DOI: https://doi.org/10.1103/physrevapplied.20.044066

IF: 4.6

2023-10-27

Physical Review Applied

Abstract:Constructing van der Waals (vdW) heterostructures is the most commonly used method for separating photogenerated carriers, which can effectively improve photocatalytic water-splitting efficiency. Although many vdW heterostructure photocatalysts have been proposed, there is still a lack of effective strategies to regulate the photocatalytic reaction ability. In this work, we propose a Sc2CO2/PtS2 heterostructure that can achieve the photocatalytic switch with different polarization directions ( P ↑ and P ↓). Both the P ↑ and P ↓ Sc2CO2/PtS2 heterostructures are semiconductors with type-II band-edge distribution. Remarkably, through the analysis of band arrangement and the built-in electric field, we found two completely different carrier-migration mechanisms inside the two heterostructures. The Sc2CO2/PtS2 heterostructure with P ↑ can be used as a direct Z-scheme photocatalyst, showing great application prospect for water splitting. In contrast, the P ↓ Sc2CO2/PtS2 heterostructure cannot undergo photocatalytic reactions affected by the direction of the built-in electric field. Therefore, based on Sc2CO2/PtS2 heterostructure, the " on " and " off " of photocatalysis are successfully achieved in a single material. Additionally, Gibbs free-energy calculation, high light absorption, and strain tunable band gap indicate that the Sc2CO2/PtS2 heterostructure is a promising candidate for photocatalytic applications. https://doi.org/10.1103/PhysRevApplied.20.044066 © 2023 American Physical Society

physics, applied
Control over topological insulator photocurrents with light polarization

J. W. McIver,D. Hsieh,H. Steinberg,P. Jarillo-Herrero,N. Gedik

DOI: https://doi.org/10.1038/nnano.2011.214

2011-11-16

Abstract:Three-dimensional topological insulators represent a new quantum phase of matter with spin-polarized surface states that are protected from backscattering. The static electronic properties of these surface states have been comprehensively imaged by both photoemission and tunneling spectroscopies. Theorists have proposed that topological surface states can also exhibit novel electronic responses to light, such as topological quantum phase transitions and spin-polarized electrical currents. However, the effects of optically driving a topological insulator out of equilibrium have remained largely unexplored experimentally, and no photocurrents have been measured. Here we show that illuminating the topological insulator Bi2Se3 with circularly polarized light generates a photocurrent that originates from topological helical Dirac fermions, and that reversing the helicity of the light reverses the direction of the photocurrent. We also observe a photocurrent that is controlled by the linear polarization of light, and argue that it may also have a topological surface state origin. This approach may allow the probing of dynamic properties of topological insulators and lead to novel opto-spintronic devices.

Mesoscale and Nanoscale Physics,Materials Science
Dual Plasmonic Nanostructures for Switching Polarity of Hot Electron-Induced Photocurrent.

Taozheng Hu,Jingyu Wu,Diyi Han,Yaxian Ni,Wen Dong,Zhuo Chen,Zhenlin Wang

DOI: https://doi.org/10.1039/c9nr10413e

IF: 6.7

2020-01-01

Nanoscale

Abstract:We report on the experimental investigation of polarity-switchable hot electron-induced photocurrents in dual-plasmonic nanostructures, consisting of two layers of gold nanoparticles (AuNPs) separated by a TiO2 film. Hot electrons generated through the non-radiative decay of the localized surface plasmon resonances supported by the top and bottom layers of AuNPs can be simultaneously injected into the TiO2 film in opposite directions and counteract each other. As a result, the polarity and magnitude of the net photocurrents can be tailored by controlling the population of hot electrons either generated from or collected by the two layers of AuNPs. We believe the wavelength-dependent photocurrent polarity switching could be useful for biosensors with a direct electrical readout and photoconversion applications.
Coherent control of photocurrent in a strongly scattering photoelectrochemical system

Seng Fatt Liew,Sebastien M. Popoff,Stafford W. Sheehan,Arthur Goetschy,Charles A. Schmuttenmaer,A. Douglas Stone,Hui Cao

DOI: https://doi.org/10.1021/acsphotonics.5b00642

2016-02-01

Abstract:A fundamental issue that limits the efficiency of many photoelectrochemical systems is that the photon absorption length is typically much longer than the electron diffusion length. Various photon management schemes have been developed to enhance light absorption; one simple approach is to use randomly scattering media to enable broadband and wide-angle enhancement. However, such systems are often opaque, making it difficult to probe photo-induced processes. Here we use wave interference effects to modify the spatial distribution of light inside a highly-scattering dye-sensitized solar cell to control photon absorption in a space-dependent manner. By shaping the incident wavefront of a laser beam, we enhance or suppress photocurrent by increasing or decreasing light concentration on the front side of the mesoporous photoanode where the collection efficiency of photoelectrons is maximal. Enhanced light absorption is achieved by reducing reflection through the open boundary of the photoanode via destructive interference, leading to a factor of two increase in photocurrent. This approach opens the door to probing and manipulating photoelectrochemical processes in specific regions inside nominally opaque media.

Optics
Controllable p- and n-type behaviours in emissive perovskite semiconductors

Wentao Xiong,Weidong Tang,Gan Zhang,Yichen Yang,Yangning Fan,Ke Zhou,Chen Zou,Baodan Zhao,Dawei Di

DOI: https://doi.org/10.1038/s41586-024-07792-4

IF: 64.8

Nature

Abstract:Reliable control of the conductivity and its polarity in semiconductors is at the heart of modern electronics1-7, and has led to key inventions including diodes, transistors, solar cells, photodetectors, light-emitting diodes and semiconductor lasers. For archetypal semiconductors such as Si and GaN, positive (p)- and negative (n)-type conductivities are achieved through the doping of electron-accepting and electron-donating elements into the crystal lattices, respectively1-6. For halide perovskites, which are an emerging class of semiconductors, mechanisms for reliably controlling charge conduction behaviours while maintaining high optoelectronic qualities are yet to be discovered. Here we report that the p- and n-type characteristics in a wide-bandgap perovskite semiconductor can be adjusted by incorporating a phosphonic acid molecular dopant with strong electron-withdrawing abilities. The resultant carrier concentrations were more than 1013 cm-3 for the p- and n-type samples, with Hall coefficients ranging from -0.5 m3 C-1 (n-type) to 0.6 m3 C-1 (p-type). A shift of the Fermi level across the bandgap was observed. Importantly, the transition from n- to p-type conductivity was achieved while retaining high photoluminescence quantum yields of 70-85%. The controllable doping in the emissive perovskite semiconductor enabled the demonstration of ultrahigh brightness (more than 1.1 × 106 cd m-2) and exceptional external quantum efficiency (28.4%) in perovskite light-emitting diodes with a simple architecture.
Photocurrent Ambipolar Behavior in Phase Junction of a Ga 2 O 3 Porous Nanostructure for Solar-Blind Light Control Logic Devices

Junhao Ye,Shuo Jin,Yuexing Cheng,Hangjie Xu,Chao Wu,Fengmin Wu,Daoyou Guo

DOI: https://doi.org/10.1021/acsami.4c01837

IF: 9.5

2024-05-13

ACS Applied Materials & Interfaces

Abstract:Photoelectrochemical (PEC) devices are the most similar artificial devices to the nervous system, which is expected to solve the problem of complex computer/nervous system interface (solid-liquid interface) and multifunctional integration (photoelectric fusion) required in the post-Moore era. Based on the different photocurrent ambipolar behavior and different deep ultraviolet solar-blind spectral photoresponse characteristics of α-Ga(2)O(3) and β-Ga(2)O(3), we designed and constructed the...

materials science, multidisciplinary,nanoscience & nanotechnology
Surface States-Induced Light Intensity-Dependent Bipolar Photoelectrodes for Selective Sensing

Yuanjian Zhang,Wang Li,Hong Yang,Qiushi Ruan,Songqin Liu,Yanfei Shen,Haibin Zhu

DOI: https://doi.org/10.26434/chemrxiv-2024-h0b3g

2024-11-15

Abstract:The mechanism behind photocurrent generation is essential for tuning photoelectrochemical properties of semiconductors and fabricating related devices. As a basic parameter, the photocurrent polarity has been exploited for information processing, and could be regulated by selecting suitable types of semiconductors, external biased potential, or photo energy. Nonetheless, the light intensity is generally thought to affect only the photocurrent intensity rather than the photocurrent polarity. Here, we report a universal strategy to modulate the photocurrent polarity by light intensity, which was also verified by four different semiconductors. The photoelectrochemical kinetics measurements disclosed that the surface states and light intensity jointly played a crucial role in the process of photogenerated carriers transfer, thus determining the photocurrent polarity. Base on the different charge transfer pathways produced under different illumination, a highly selective PEC sensing platform was constructed to specifically recognize dopamine without any modification process.

Chemistry
Electrically Controlled Wavelength-Tunable Photoluminescence from van der Waals Heterostructures

Hongwu Tang,Fang Luo,Ziru Cui,Yang Xiao,Wei Xu,Zhihong Zhu,Shula Chen,Xiao Wang,Yanping Liu,Jinbin Wang,Gang Peng,Shiqiao Qin,Mengjian Zhu

DOI: https://doi.org/10.1021/acsami.2c02321

2022-04-19

Abstract:Achieving facile control of the wavelength of light emitters is of great significance for many key applications in optoelectronics and photonics, including on-chip interconnection, super-resolution imaging, and optical communication. The Joule heating effect caused by electric current is widely applied in modulating the refractive index of silicon-based waveguides for reconfigurable nanophotonic circuits. Here, by utilizing localized Joule heating in the biased graphene device, we demonstrate...

materials science, multidisciplinary,nanoscience & nanotechnology
Steered electrical pathways of plasmonic metal-semiconductor heterostructures via crystal-phase-dependent selective deposition

Shan-Jiang Wang,Shan-Jiang Wang,Shan-Jiang Wang,Dan Su,Dan Su,Xiao-Yang Zhang,Xiao-Yang Zhang,Huan-Li Zhou,Huan-Li Zhou,Tong Zhang,Tong Zhang

DOI: https://doi.org/10.1016/j.coco.2023.101558

IF: 8

2023-04-01

Composites Communications

Abstract:Plasmon mediated heterojunction with tunable and superior photoelectrical performance is an intriguing approach to improve light harvesting in photocatalysis. However, the low separation efficiency and uncertain diffusion directions of charges remained still a challenge to meet desired photocatalytic process. To overcome these issues, in this work, we showed the crystal-phase-dependent effects of the semiconductor for hot-electrons transfer assisted by plasmonic heterostructures under visible light by using Au–P25 as a model. It was found that Au–P25 formed by Au-anatase-rutile was greatly advantageous over that of Au-rutile-anatase for the hot-electrons separation and transportation (∼3 folds increase in photocurrents density). Such differences may account for the suitable band alignment mediated by selective crystal phase contact, which forming a convenient pathway for fluent electrons transfer caused by the smaller interfacial energy barrier in Au-anatase-rutile, comparing to that in Au-rutile-anatase. Such results might offer some useful contributions to the future design of nanomaterials for plasmon-mediated photoelectrical or photochemical applications.

materials science, composites
Electric field controlled valley-polarized photocurrent switch based on the circular bulk photovoltaic effect

Yaqing Yang,Xiaoyu Cheng,Liantuan Xiao,Suotang Jia,Jun Chen,Lei Zhang,Jian Wang

DOI: https://doi.org/10.1103/PhysRevB.109.235403

2024-06-14

Abstract:Efficient electric manipulation of valley degrees of freedom is critical and challenging for the advancement of valley-based information science and technology. We put forth an electrical scheme, based on a two-band Dirac model, that can switch the fully valley-polarized photocurrent between K and K' valleys using the circular bulk electro-photovoltaic effect. This is accomplished by applying an out-of-plane electric field to the two-dimensional valley materials, which enables continuous tuning of the Berry curvature and its sign flip. We found that the switch of the fully valley-polarized photocurrent is directly tied to the sign change of Berry curvature, which accompanies a topological phase transition, for instance, the quantum spin Hall effect and the quantum valley Hall effect. This scheme has been confirmed in monolayer BiAsI2 and germanene through first-principles calculations. Our paper offers a promising strategy for the development of a volatile valley-addressable memory device and could inspire further research in this area.

Mesoscale and Nanoscale Physics
Asymmetric photon transport in organic semiconductor nanowires through electrically controlled exciton diffusion

Qiu Hong Cui,Qian Peng,Yi Luo,Yuqian Jiang,Yongli Yan,Cong Wei,Zhigang Shuai,Cheng Sun,Jiannian Yao,Yong Sheng Zhao

DOI: https://doi.org/10.1126/sciadv.aap9861

IF: 13.6

2018-01-01

Science Advances

Abstract:Asymmetric photon transport was experimentally realized in a single organic semiconductor nanowire. The ability to steer the flow of light toward desired propagation directions is critically important for the realization of key functionalities in optical communication and information processing. Although various schemes have been proposed for this purpose, the lack of capability to incorporate an external electric field to effectively tune the light propagation has severely limited the on-chip integration of photonics and electronics. Because of the noninteractive nature of photons, it is only possible to electrically control the flow of light by modifying the refractive index of materials through the electro-optic effect. However, the weak optical effects need to be strongly amplified for practical applications in high-density photonic integrations. We show a new strategy that takes advantage of the strong exciton-photon coupling in active waveguides to effectively manipulate photon transport by controlling the interaction between excitons and the external electric field. Single-crystal organic semiconductor nanowires were used to generate highly stable Frenkel exciton polaritons with strong binding and diffusion abilities. By making use of directional exciton diffusion in an external electric field, we have realized an electrically driven asymmetric photon transport and thus directional light propagation in a single nanowire. With this new concept, we constructed a dual-output single wire–based device to build an electrically controlled single-pole double-throw optical switch with fast temporal response and high switching frequency. Our findings may lead to the innovation of concepts and device architectures for optical information processing.

Controlling photocurrent direction with light

Bidirectional photocurrent in p–n heterojunction nanowires

Switching Electron Current In A Semiconductor Nanowire Via Controlling The Carrier Injection From The Electrode

Polarization-induced photocurrent switching effect in heterojunction photodiodes

Dual-polarity Photocurrent of MBE-grown P-Algan/n-gan P–n Nanowires

Hybrid Semiconductor Electrodes For Light-Driven Photoelectrochemical Switches

Photovoltage‐Competing Dynamics in Photoelectrochemical Devices: Achieving Self‐Powered Spectrally Distinctive Photodetection

A Novel Energy-Dependent P-Semiconductor–metal–n-semiconductor Heterojunction for Selectively Steering Charge Flow in a Z-scheme Photocatalyst

Light-modulated Vertical Heterojunction Phototransistors with Distinct Logical Photocurrents

Photocatalytic And Photoelectrochemical Properties Of P-N Heterojunction Composites

Polarization-direction-controlled Z-scheme photocatalytic switch in heterostructures: A first-principles study

Control over topological insulator photocurrents with light polarization

Dual Plasmonic Nanostructures for Switching Polarity of Hot Electron-Induced Photocurrent.

Coherent control of photocurrent in a strongly scattering photoelectrochemical system

Controllable p- and n-type behaviours in emissive perovskite semiconductors

Photocurrent Ambipolar Behavior in Phase Junction of a Ga 2 O 3 Porous Nanostructure for Solar-Blind Light Control Logic Devices

Surface States-Induced Light Intensity-Dependent Bipolar Photoelectrodes for Selective Sensing

Electrically Controlled Wavelength-Tunable Photoluminescence from van der Waals Heterostructures

Steered electrical pathways of plasmonic metal-semiconductor heterostructures via crystal-phase-dependent selective deposition

Electric field controlled valley-polarized photocurrent switch based on the circular bulk photovoltaic effect

Asymmetric photon transport in organic semiconductor nanowires through electrically controlled exciton diffusion