Dual-polarity Photocurrent of MBE-grown P-Algan/n-gan P–n Nanowires

Danhao Wang,Yang Kang,Xin Liu,Shi Fang,Yuanmin Luo,Xiyu Sun,Haiding Sun

DOI: https://doi.org/10.1364/cleo_si.2022.sf1d.5

2022-01-01

Abstract:We observed bidirectional photocurrent behavior in p-AlGaN/n-GaN nanowire p-n heterojunction, enabling a fast way to distinguish different spectral bands by simply verifying the polarity of photocurrent and its magnitude.

What problem does this paper attempt to address?

Hybrid heterojunction and photoelectrochemistry solar cell based on silicon nanowires and double-walled carbon nanotubes.

Qinke Shu,Jinquan Wei,Kunlin Wang,Hongwei Zhu,Zhen Li,Yi Jia,Xuchun Gui,Ning Guo,Xinming Li,Chaoran Ma,Dehai Wu

DOI: https://doi.org/10.1021/nl902581k

IF: 10.8

2009-01-01

Nano Letters

Abstract:A hybrid solar cell model composed of a heterojunction cell and a photoelectrochemical (PEC) cell has been proposed and characterized. In the hybrid cell, a thin film of double-walled carbon nanotubes forms a heterojunction with the silicon nanowire (SiNW) array and also functions as the transparent counter electrode of the PEC cell. The cell performance can be readily tuned by controlling the SiNW density. Under AM 1.5G illumination, a power conversion efficiency of 1.29%, higher than those reported for SiNW array-based PEC cells, has been obtained.
Bidirectional photocurrent in p–n heterojunction nanowires

Danhao Wang,Xin Liu,Yang Kang,Xiaoning Wang,Yuanpeng Wu,Shi Fang,Huabin Yu,Muhammad Hunain Memon,Haochen Zhang,Wei Hu,Zetian Mi,Lan Fu,Haiding Sun,Shibing Long

DOI: https://doi.org/10.1038/s41928-021-00640-7

IF: 33.255

2021-09-01

Nature Electronics

Abstract:Nature Electronics, Published online: 23 September 2021; doi:10.1038/s41928-021-00640-7A light-detection electrochemical cell that is based on vertically aligned p–n heterojunction nanowires in an electrolyte environment can exhibit a photoresponse in which the polarity is reversed depending on the wavelength of light.

engineering, electrical & electronic
Bipolar Photoresponse in P–n Heterojunction for Spectrally Distinctive Photodetection

Wei Chen,Danhao Wang,Dongyang Luo,Yang Kang,Shi Fang,Haiding Sun

DOI: https://doi.org/10.1109/ipc57732.2023.10360647

2023-01-01

Abstract:We constructed a bipolar photoresponse photodetector based on Pt nanoparticle-modified p-AlGaN/n-GaN nanowires p-n heterojunctions. The bidirectional photocurrent phenomenon was observed in the semiconductor p-n heterojunction under 254 nm and 365 nm irradiation, overcoming the limitation of the unidirectional photocurrent of conventional p-n junctions.
Light‐Induced Bipolar Photoresponse with Amplified Photocurrents in an Electrolyte‐Assisted Bipolar p–n Junction (Adv. Mater. 28/2023)

Shi Fang,Liuan Li,Weiyi Wang,Wei Chen,Danhao Wang,Yang Kang,Xin Liu,Hongfeng Jia,Yuanmin Luo,Huabin Yu,Muhammad Hunain Memon,Wei Hu,Boon S. Ooi,Jr‐Hau He,Haiding Sun

DOI: https://doi.org/10.1002/adma.202370198

IF: 29.4

2023-07-14

Advanced Materials

Abstract:Photoelectrodes A bipolar‐junction photoelectrode based on a p–n‐junction GaN nanowire array is shown by Haiding Sun and co‐workers in article number 2300911 to exhibit unambiguously bipolar photoresponse with an output of positive and negative photocurrents under illumination of 365 nm and 265 nm light, respectively. Importantly, a dual‐band optical communication system incorporated with such a photoelectrode is constructed using only one photoelectrode to decode dual‐channel signals with encrypted property.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Structural Designs of AlGaN/GaN Nanowire-Based Photoelectrochemical Photodetectors: Carrier Transport Regulation in GaN Segment As Current Flow Hub

Saisai Wang,Pengfei Shao,Ting Zhi,Zhujun Gao,Wenhao Chen,Lin Hao,Qing Cai,Jin Wang,Junjun Xue,Bin Liu,Dunjun Chen,Lianhui Wang,Rong Zhang

DOI: https://doi.org/10.1117/1.apn.2.3.036003

2023-01-01

Abstract:The AlGaN/GaN p-n junction has received extensive attention due to its capability of rapid photogenerated carrier separation in photodetection devices. The AlGaN/GaN heterojunction nanowires (NWs) have been especially endowed with new life for distinctive transport characteristics in the photoelectrochemical (PEC) detection field. A self-powered PEC ultraviolet photodetector (PEC UV PD) based on the p-AlGaN/n-GaN heterojunction NW is reported in this work. The n-GaN NW layer plays a crucial role as a current flow hub to regulate carrier transport, which mainly acts as a light absorber under 365 nm and carrier recombination layer under 255 nm illumination, which can effectively modulate photoresponsivity at different wavelengths. Furthermore, by designing the thicknesses of the NW layer, the photocurrent polarity reversal was successfully achieved in the constructed AlGaN/GaN NW PEC UV PD at two different light wavelengths. In addition, by combining with platinum decoration, the photoresponse performance could be further enhanced. Our work provides insight into transport mechanisms in the AlGaN/GaN NW PEC system, and offers a feasible and comprehensive strategy for further exploration of multifunctional optoelectronic devices.
Photovoltage‐Competing Dynamics in Photoelectrochemical Devices: Achieving Self‐Powered Spectrally Distinctive Photodetection

Xin Liu,Danhao Wang,Yang Kang,Shi Fang,Huabin Yu,Haochen Zhang,Muhammad Hunain Memon,Jr‐Hau He,Boon S. Ooi,Haiding Sun,Shibing Long

DOI: https://doi.org/10.1002/adfm.202104515

IF: 19

2021-10-22

Advanced Functional Materials

Abstract:Abstract Multiple‐band and spectrally distinctive photodetection play critical roles in building next‐generation colorful imaging, spectroscopy, artificial vision, and optically controlled logic circuits of the future. Unfortunately, it remains challenging for conventional semiconductor photodetectors to distinguish different spectrum bands with photon energy above the bandgap of the material. Herein, for the first time, a photocurrent polarity‐switchable photoelectrochemical device composed of group III‐nitride semiconductors, demonstrating a positive photocurrent density of 10.54 µA cm −2 upon 254 nm illumination and a negative photocurrent density of −0.08 µA cm −2 under 365 nm illumination without external power supply, is constructed. Such bidirectional photocurrent behavior arises from the photovoltage‐competing dynamics across two photoelectrodes. Importantly, a significant boost of the photocurrent and corresponding responsivity under 365 nm illumination can be achieved after decorating the counter electrode of n‐type AlGaN nanowires with platinum (Pt) nanoparticles, which promote a more efficient redox reaction in the device. It is envisioned that the photocurrent polarity‐switch behavior offers new routes to build multiple‐band photodetection devices for complex light‐induced sensing systems, covering a wide spectrum band from deep ultraviolet to infrared, by simply engineering the bandgaps of semiconductors.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Balancing the Photo‐Induced Carrier Transport Behavior at Two Semiconductor Interfaces for Dual‐Polarity Photodetection

Shi Fang,Danhao Wang,Yang Kang,Xin Liu,Yuanmin Luo,Kun Liang,Liuan Li,Huabin Yu,Haochen Zhang,Muhammad Hunain Memon,Boyang Liu,Zhenghui Liu,Haiding Sun

DOI: https://doi.org/10.1002/adfm.202202524

IF: 19

2022-04-13

Advanced Functional Materials

Abstract:A photoelectrochemical‐type photosensor using monocrystalline p‐GaN nanowires on the Si platform is built with two primary interfaces, at which the charge separation and transport determine the photoresponses. With rational Platinum decoration, the balance of the charge carriers is tuned, making the device exhibit either positive or negative photocurrent upon different light illumination.The carrier transport dynamics at the surface/interface of semiconductors determine the electronic and optical properties of devices. Thus, precise control of their dynamic processes while understanding the nature of these characteristics is crucial for modulating device functionalities. Here, a photoelectrochemical‐type photosensor is built using monocrystalline p‐GaN nanowires on the Si platform, which unambiguously exhibits either positive or negative photocurrent upon different light illumination. Such dual‐polarity photocurrents are attributed to photogenerated‐carrier‐transport competition at two interfaces: the GaN/electrolyte and GaN/Si interface. Particularly, a rational Pt decoration successfully accelerates the carrier migration at the GaN/electrolyte interface that breaks the original balance of carrier transport. This mechanism is further elaborated by Kelvin‐probe‐force‐microscopy characterization, which intuitively reveals the impact of Pt decoration on modulating nanowires' surface band bending and the consequent carrier dynamics at the interfaces. These insights into the control of carrier dynamics shed light on achieving multi‐functional PEC devices built upon simple semiconductor architectures.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection

Mariano A. Zimmler,Jiming Bao,Ilan Shalish,Wei Yi,Venkatesh Narayanamurti,Federico Capasso

DOI: https://doi.org/10.1088/0957-4484/18/39/395201

2007-09-04

Abstract:We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device is that by reversing the polarity of the applied voltage the luminescence can be selectively obtained from either the nanowire or the substrate. For one polarity of the applied voltage, ultraviolet (and visible) light is generated in the GaN nanowire, while for the opposite polarity infrared light is emitted from the Si substrate. We propose a model, which explains the key features of the data, based on electron tunnelling from the valence band of one semiconductor into the conduction band of the other semiconductor. For example, for one polarity of the applied voltage, given a sufficient potential energy difference between the two semiconductors, electrons can tunnel from the valence band of GaN into the Si conduction band. This process results in the creation of holes in GaN, which can recombine with conduction band electrons generating GaN band-to-band luminescence. A similar process applies under the opposite polarity for Si light emission. This device structure affords an additional experimental handle to the study of electroluminescence in single nanowires and, furthermore, could be used as a novel approach to two-colour light-emitting devices.

Other Condensed Matter
Light‐Induced Bipolar Photoresponse with Amplified Photocurrents in Electrolyte‐Assisted Bipolar p‐n Junction

Shi Fang,Liuan Li,Weiyi Wang,Wei Chen,Danhao Wang,Yang Kang,Xin Liu,Hongfeng Jia,Yuanmin Luo,Huabin Yu,Muhammad Hunain Memon,Wei Hu,Boon S. Ooi,Jr‐Hau He,Haiding Sun

DOI: https://doi.org/10.1002/adma.202300911

IF: 29.4

2023-03-15

Advanced Materials

Abstract:The p‐n junction with bipolar characteristics sets the fundamental unit to build electronics while its unique rectification behavior constrains the degree of carrier tunability for expanded functionalities. Herein, we report a bipolar‐junction photoelectrode employed with gallium nitride (GaN) p‐n homojunction nanowire array that operates in electrolyte, demonstrating bipolar photoresponse controlled by different wavelengths of light. Significantly, with rational decoration of a ruthenium‐oxides (RuOx) layer on nanowires guided by theoretical modeling, the resulted RuOx/p‐n GaN photoelectrode exhibits unambiguously boosted bipolar photoresponse by an enhancement of 775% and 3000% for positive and negative photocurrents, respectively, compared to the pristine nanowires. The loading of RuOx layer on nanowire surface optimizes surface band bending which facilitates charge transfer across the GaN/electrolyte interface, meanwhile promoting the efficiency of redox reaction for both hydrogen evolution reaction and oxygen evolution reaction which corresponds to the negative and positive photocurrents, respectively. Finally, a dual‐band optical communication system incorporated with such photoelectrode is constructed with using only one photoelectrode to decode dual‐channel signals with encrypted property. The proposed bipolar device architecture presents a viable route to manipulate the carrier dynamics for the development of a plethora of multi‐functional optoelectronic devices for future sensing, communication, and imaging systems. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Photocurrent and Photoconductance Properties of a GaAs Nanowire

S. Thunich,L. Prechtel,D. Spirkoska,G. Abstreiter,A. Fontcuberta i Morral,A. W. Holleitner

DOI: https://doi.org/10.1063/1.3193540

2009-05-22

Abstract:We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy (MBE), and they are electrically contacted by a focused ion beam (FIB) deposition technique. The observed photocurrent is generated at the Schottky contacts between the nanowire and metal source-drain electrodes, while the observed photoconductance signal can be explained by a photogating effect induced by optically generated charge carriers located at the surface of the nanowire. Both optoelectronic effects are sensitive to the polarization of the exciting laser field, enabling polarization dependent photodetectors.

Mesoscale and Nanoscale Physics,Materials Science
Observation of the Photoinduced Anomalous Hall Effect in Gan-Based Heterostructures

C. M. Yin,N. Tang,S. Zhang,J. X. Duan,F. J. Xu,J. Song,F. H. Mei,X. Q. Wang,B. Shen,Y. H. Chen,J. L. Yu,H. Ma

DOI: https://doi.org/10.1063/1.3569948

IF: 4

2011-01-01

Applied Physics Letters

Abstract:The photocurrent has been measured in Al0.25Ga0.75N/GaN heterostructures at room temperature, and the photoinduced anomalous Hall effect (AHE) was observed. The AHE current changes linearly with the varied longitudinal electric fields. Due to the strong Rashba spin–orbit coupling of the two-dimensional electron gas in Al0.25Ga0.75N/GaN heterostructures, the intrinsic anomalous Hall mechanism is supposed to contribute to the photoinduced AHE. The photoinduced AHE measurement proposed in this study could be used to other spin related measurements at room temperature.
Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates

Shivali Agrawal,Len van Deurzen,Jimy Encomendero,Joseph E. Dill,Hsin Wei,Huang,Vladimir Protasenko,Huili,Xing,Debdeep Jena

2023-12-14

Abstract:Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of $V_{\text{bi}}\approx5.5$ V, a minimum room temperature ideality factor of $\eta\approx 1.63$, and more than 12 orders of current modulation at room temperature. Stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300$^\circ$C. The one-sided n$^{+}$-p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance-voltage profile. The measured average mobile hole density is $p \sim 5.7 \times 10^{17}$ cm$^{-3}$, in close agreement with what is theoretically expected from distributed polarization doping. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n$^{+}$ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization doping enables ultrawide bandgap semiconductor heterojunction p-n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.

Applied Physics
Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Shivali Agrawal,Len van Deurzen,Jimy Encomendero,Joseph E. Dill,Hsin Wei (Sheena) Huang,Vladimir Protasenko,Huili (Grace) Xing,Debdeep Jena

DOI: https://doi.org/10.1063/5.0189419

IF: 4

2024-03-04

Applied Physics Letters

Abstract:Ultrawide bandgap heterojunction p–n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current–voltage characteristics show a turn-on voltage of Vbi≈5.5 V, a minimum room temperature ideality factor of η≈1.63, and more than 12 orders of current modulation at room temperature. A stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300 °C. The one-sided n+–p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance–voltage profile. The measured average mobile hole density is p∼5.7×1017 cm−3, in close agreement with what is theoretically expected from distributed polarization doping. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n+ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization doping enables ultrawide bandgap semiconductor heterojunction p–n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.

physics, applied
Observation of Polarity-Switchable Photoconductivity in III-nitride/MoSx Core-Shell Nanowires

Danhao Wang,Wentiao Wu,Shi Fang,Yang Kang,Xiaoning Wang,Wei Hu,Huabin Yu,Haochen Zhang,Xin Liu,Yuanmin Luo,Jr-Hau He,Lan Fu,Shibing Long,Sheng Liu,Haiding Sun

DOI: https://doi.org/10.1038/s41377-022-00912-7

2022-01-01

Light Science & Applications

Abstract:III-V semiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices. However, solely relying on their intrinsic physical and material properties sometimes limits device functionalities to meet the increasing demands in versatile and complex electronic world. By leveraging the distinctive nature of the one-dimensional geometry and large surface-to-volume ratio of the nanowires, new properties can be attained through monolithic integration of conventional nanowires with other easy-synthesized functional materials. Herein, we combine high-crystal-quality III-nitride nanowires with amorphous molybdenum sulfides (a-MoSx) to construct III-nitride/a-MoSx core-shell nanostructures. Upon light illumination, such nanostructures exhibit striking spectrally distinctive photodetection characteristic in photoelectrochemical environment, demonstrating a negative photoresponsivity of -100.42 mA W-1 under 254 nm illumination, and a positive photoresponsivity of 29.5 mA W-1 under 365 nm illumination. Density functional theory calculations reveal that the successful surface modification of the nanowires via a-MoSx decoration accelerates the reaction process at the electrolyte/nanowire interface, leading to the generation of opposite photocurrent signals under different photon illumination. Most importantly, such polarity-switchable photoconductivity can be further tuned for multiple wavelength bands photodetection by simply adjusting the surrounding environment and/or tailoring the nanowire composition, showing great promise to build light-wavelength controllable sensing devices in the future.
Polarization-induced photocurrent switching effect in heterojunction photodiodes

Dingbo Chen,Yu-Chang Chen,Guang Zeng,Yu-Chun Li,Xiao-Xi Li,Dong Li,Chao Shen,Nan Chi,Boon S. Ooi,David Wei Zhang,Hong-Liang Lu

DOI: https://doi.org/10.1007/s12274-022-5086-8

IF: 9.9

2022-11-15

Nano Research

Abstract:The unipolar photocurrent in conventional photodiodes (PDs) based on photovoltaic effect limits the output modes and potential versatility of these devices in photodetection. Bipolar photodiodes with photocurrent switching are emerging as a promising solution for obtaining photoelectric devices with unique and attractive functions, such as optical logic operation. Here, we design an all-solid-state chip-scale ultraviolet (UV) PD based on a hybrid GaN heterojunction with engineered bipolar polarized electric field. By introducing the polarization-induced photocurrent switching effect, the photocurrent direction can be switched in response to the wavelength of incident light at 0 V bias. In particular, the photocurrent direction exhibits negative when the irradiation wavelength is less than 315 nm, but positive when the wavelength is longer than 315 nm. The device shows a responsivity of up to −6.7 mA/W at 300 nm and 5.3 mA/W at 340 nm, respectively. In particular, three special logic gates in response to different dual UV light inputs are demonstrated via a single bipolar PD, which may be beneficial for future multifunctional UV photonic integrated devices and systems.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
A High Quantum Efficiency Narrow-Band UV-B AlGaN P-I-n Photodiode with Polarization Assistance

Qianyu Hou,Haifan You,Qing Cai,Hui Guo,Pengfei Shao,Danfeng Pan,Le Yu,Dunjun Chen,Hai Lu,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1109/jphot.2021.3086855

IF: 2.4

2021-01-01

IEEE Photonics Journal

Abstract:We designed and fabricated narrow-band UV-B AlGaN p-i-n photodiodes (PDs) with a full-width at half-maximum (FWHM) of 8 nm by optimizing the Al composition and thickness of the AlGaN layers. To improve the photoelectric response of the narrow-band PDs, a polarization electric field with the same direction with the applied bias field was introduced to the absorption layer by adjusting the Al composition ratio between the p-type AlGaN layer and i-type AlGaN absorption layer. The polarization enhanced narrow-band PD exhibited a higher external quantum efficiency (EQE) of 82% than the conventional one with an EQE of 67%. Meanwhile, a low dark current density of 1.7 nA/cm(2) and four orders of magnitude UV-visible rejection ratio were achieved for the enhanced narrow-band PDs with a maximum photocurrent responsivity of 202 mA/W at 304 nm.
Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors

Maria Spies,Martien I. Den Hertog,Pascal Hille,Jörg Schörmann,Jakub Polaczyński,Bruno Gayral,Martin Eickhoff,Eva Monroy,Jonas Lähnemann

DOI: https://doi.org/10.1021/acs.nanolett.7b01118

2017-10-27

Abstract:We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such a way that the application of positive or negative bias leads to an enhancement of the collection of photogenerated carriers from the GaN/AlN superlattice or from the GaN base, respectively, as confirmed by electron beam-induced current measurements. The devices display enhanced response in the ultraviolet A ($\approx$ 330-360 nm) / B ($\approx$ 280-330 nm) spectral windows under positive/negative bias. The result is explained by correlation of the photocurrent measurements with scanning transmission electron microscopy observations of the same single nanowire, and semi-classical simulations of the strain and band structure in one and three dimensions.

Applied Physics,Mesoscale and Nanoscale Physics,Materials Science,Optics
Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography

Martien Den Hertog,Rudeesun Songmuang,Eva Monroy

DOI: https://doi.org/10.1088/1742-6596/471/1/012019

2014-04-10

Abstract:In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of nanowire samples for electron holography and combine potential profiles obtained using holography with theoretical calculations of the projected potential in order to gain understanding of the potential distribution in these nanostructures. The effects of surface states are discussed

Materials Science
Dual Plasmonic Nanostructures for Switching Polarity of Hot Electron-Induced Photocurrent.

Taozheng Hu,Jingyu Wu,Diyi Han,Yaxian Ni,Wen Dong,Zhuo Chen,Zhenlin Wang

DOI: https://doi.org/10.1039/c9nr10413e

IF: 6.7

2020-01-01

Nanoscale

Abstract:We report on the experimental investigation of polarity-switchable hot electron-induced photocurrents in dual-plasmonic nanostructures, consisting of two layers of gold nanoparticles (AuNPs) separated by a TiO2 film. Hot electrons generated through the non-radiative decay of the localized surface plasmon resonances supported by the top and bottom layers of AuNPs can be simultaneously injected into the TiO2 film in opposite directions and counteract each other. As a result, the polarity and magnitude of the net photocurrents can be tailored by controlling the population of hot electrons either generated from or collected by the two layers of AuNPs. We believe the wavelength-dependent photocurrent polarity switching could be useful for biosensors with a direct electrical readout and photoconversion applications.
Ultrahigh Bipolar Photoresponse in a Self-Powered Ultraviolet Photodetector Based on GaN and In/Sn-Doped Ga2O3 Nanowires pn junction.

Wei Xu,Bei Li,Shuanglong Feng,Qingshan Wang,Yutong Wu,Wenqiang Lu,Kun Zhang,Zhiyu Dong

DOI: https://doi.org/10.1021/acsami.4c04812

2024-06-27

Abstract:Self-powered ultraviolet photodetectors with bipolar photoresponse have great potential in the fields of ultraviolet optical communication, all-optical controlled artificial synapses, high-resolution ultraviolet imaging equipment, and multiband photoelectric detection. However, the current low optoelectronic performance limits the development of such polar switching devices. Here, we construct a self-powered ultraviolet photodetector based on GaN and In/Sn-doped Ga2O3 (IGTO) nanowires (NWs) pn junction structure. This unique nanowire/thin film structure allows GaN and IGTO to dominate the absorption of light at different wavelengths, resulting in a highly bipolar photoresponse. The device has a responsivity of 2.04 A/W and a normalized detectivity of 7.18 × 1013 Jones at 254 nm and a responsivity of -2.09 A/W and a normalized detectivity of -7 × 1013 Jones at 365 nm, both at zero bias. In addition, it has an extremely high Ilight/Idark ratio of 1.05 × 105 and ultrafast response times of 2.4/1.9 ms (at 254 nm) and 5.7/5.2 ms (at 365 nm). These excellent properties are attributed to the high specific surface area of the one-dimensional nanowire structure and the abundant voids generated by the nanowire network to enhance the absorption of light, and the p-n junction structure enables the rapid separation and transfer of photogenerated electron-hole pairs. Our findings provide a feasible strategy for high-performance wavelength-controlled polarity switching devices.

Medicine,Engineering,Physics,Materials Science

Dual-polarity Photocurrent of MBE-grown P-Algan/n-gan P–n Nanowires

Hybrid heterojunction and photoelectrochemistry solar cell based on silicon nanowires and double-walled carbon nanotubes.

Bidirectional photocurrent in p–n heterojunction nanowires

Bipolar Photoresponse in P–n Heterojunction for Spectrally Distinctive Photodetection

Light‐Induced Bipolar Photoresponse with Amplified Photocurrents in an Electrolyte‐Assisted Bipolar p–n Junction (Adv. Mater. 28/2023)

Structural Designs of AlGaN/GaN Nanowire-Based Photoelectrochemical Photodetectors: Carrier Transport Regulation in GaN Segment As Current Flow Hub

Photovoltage‐Competing Dynamics in Photoelectrochemical Devices: Achieving Self‐Powered Spectrally Distinctive Photodetection

Balancing the Photo‐Induced Carrier Transport Behavior at Two Semiconductor Interfaces for Dual‐Polarity Photodetection

A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection

Light‐Induced Bipolar Photoresponse with Amplified Photocurrents in Electrolyte‐Assisted Bipolar p‐n Junction

Photocurrent and Photoconductance Properties of a GaAs Nanowire

Observation of the Photoinduced Anomalous Hall Effect in Gan-Based Heterostructures

Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Observation of Polarity-Switchable Photoconductivity in III-nitride/MoSx Core-Shell Nanowires

Polarization-induced photocurrent switching effect in heterojunction photodiodes

A High Quantum Efficiency Narrow-Band UV-B AlGaN P-I-n Photodiode with Polarization Assistance

Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors

Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography

Dual Plasmonic Nanostructures for Switching Polarity of Hot Electron-Induced Photocurrent.

Ultrahigh Bipolar Photoresponse in a Self-Powered Ultraviolet Photodetector Based on GaN and In/Sn-Doped Ga2O3 Nanowires pn junction.