Abstract:The planar charge transfer is a distinctive characteristic of the two-dimensional (2D) polar materials. When such 2D polar materials are involved in vertical heterostructures (VHs), in addition to the van der Waals (vdW) interlayer interaction, the interfacial interaction triggered by the in-plane charge transfer will play a crucial role. To deeply understand such mechanism, we conducted a comprehensive theoretical study focusing on the structural stability and electronic properties of 2D polar VHs built by commensurate SiGe/GeC bilayers with four species ordering patterns (classified as a C-group with patterns I and II and a Ge-group with patterns III and IV, respectively). It was found that the commensurate SiGe/GeC VHs are mainly stabilized by interfacial interactions (including the electrostatic interlayer bonding, the vdW force, as well as the sp2/sp3 orbital hybridization), with the Ge-group being the most energetically favorable than the C-group. A net charge redistribution occurs between adjacent layers, which is significant (~0.23 – 0.25 e/cell) in patterns II and IV, but slightly small (~0.05 – 0.09 e/cell) in patterns I and III, respectively, forming spontaneous p-n heterojunctions. Such interlayer charge transfer could also lead to a polarization in the interfacial region, with the electron depletion (accumulation) close to the GeC layer and the electron accumulation (depletion) close to the SiGe layer in the C-group (the Ge-group). This type of interface dipoles could induce a built-in electric field and help to promote photogenerated electrons (holes) migration. Furthermore, a semi-metal nature with a tiny direct band gap at the SiGe layer and a semiconducting nature at the GeC layer indicate that the commensurate SiG/GeC VHs possess a type-I band alignment of heterojunction and have a wide spectrum of light absorption capabilities, indicating its promising applications for enhancing light-matter interaction and interfacial engineering.

Giant polarization charge density at lattice-matched GaN/ScN interfaces

Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures

Experimental Determination of Giant Polarization in Wurtzite III-Nitride Semiconductors

Lattice-Matched Multiple Channel AlScN/GaN Heterostructures

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Rethinking Polarization in Wurtzite Semiconductors

Conduction-band engineering of polar nitride semiconductors with wurtzite ScAlN for near-infrared photonic devices

Stability and Electronic Properties of GaN Phases with Inversion Symmetry to Inherently Inhibit Polarization

Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Wurtzite BAlN and BGaN Alloys for Heterointerface Polarization Engineering

Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction

Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration

Polarity Reversal and Strain Modulation of Janus MoSSe/GaN Polar Semiconductor Heterostructures.

ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures

Crucial Role of Interfacial Interaction in 2D Polar SiGe/GeC Heterostructures

Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures

Polarity reversal and strain modulation of Janus MoSSe/GaN polar semiconductor heterostructures

Theory of local electric polarization and its relation to internal strain: impact on the polarization potential and electronic properties of group-III nitrides

N-polar ScAlN and HEMTs grown by molecular beam epitaxy