Abstract:In recent years, van der Waals (vdW) heterostructures and homostructures, which consist of stacks of two-dimensional (2D) materials, have risen to prominence due to their association with exotic quantum phenomena. Atomistic scale relaxation effects play an extremely important role in the electronic scale quantum physics of these systems. We investigate such structural relaxation effects in this work using atomistic and mesoscale models, within the context of twisted bilayer graphene -- a well-known heterostructure system that features moire patterns arising from the lattices of the two graphene layers. For small twist angles, atomic relaxation effects in this system are associated with the natural emergence of interface dislocations or strain solitons, which result from the cyclic nature of the generalized stacking fault energy (GSFE), that measures the interface energy based on the relative movement of the two layers. In this work, we first demonstrate using atomistic simulations that atomic reconstruction in bilayer graphene under a large twist also results from interface dislocations, although the Burgers vectors of such dislocations are considerably smaller than those observed in small-twist systems. To reveal the translational invariance of the heterointerface responsible for the formation of such dislocations, we derive the translational symmetry of the GSFE of a 2D heterostructure using the notions of coincident site lattices (CSLs) and displacement shift complete lattices (DSCLs). The workhorse for this exercise is a recently developed Smith normal form bicrystallography framework. Next, we construct a bicrystallography-informed and frame-invariant Frenkel-Kontorova model, which can predict the formation of strain solitons in arbitrary 2D heterostructures, and apply it to study a heterostrained, large-twist bilayer graphene system.

Commensurate-incommensurate phase transition and a network of domain walls in bilayer graphene with a biaxially stretched layer

Two phases with different domain wall networks and a reentrant phase transition in bilayer graphene under strain

Dislocations in stacking and commensurate-incommensurate phase transition in bilayer graphene and hexagonal boron nitride

Commensurate–incommensurate Transition in Graphene on Hexagonal Boron Nitride

Commensuration and Interlayer Coherence in Twisted Bilayer Graphene

Formation of Topological Domain Walls and Quantum Transport Properties of Zero-Line Modes in Commensurate Bilayer Graphene Systems

Stacking in incommensurate graphene/hexagonal-boron-nitride heterostructures based on ab initio study of interlayer interaction

Evolution of the Confined States in Graphene Nanobubbles

Ab-initio energetics of graphite and multilayer graphene: stability of Bernal versus rhombohedral stacking

Strain disorder and gapless intervalley coherent phase in twisted bilayer graphene

Domain wall competition in the Chern insulating regime of twisted bilayer graphene

Topological phase transition from trigonal warping in van der Waals multilayers

Commensurate and incommensurate double moire interference in graphene encapsulated by hexagonal boron nitride

Emergent Geometric Frustration and Flat Band in Moiré Bilayer Graphene

Symmetry breaking in commensurate graphene rotational stacking; a comparison of theory and experiment

Strong-coupling topological states and phase transitions in helical trilayer graphene

Giant atomic swirl in graphene bilayers with biaxial heterostrain

Signature of multilayer graphene strain-controlled domain walls in quantum Hall effect

Bicrystallography-informed Frenkel-Kontorova model for interlayer dislocations in strained 2D heterostructures

Extended Coupled Cluster approach to Twisted Graphene Layers

Electrically tunable correlated domain wall network in twisted bilayer graphene