Commensurate and incommensurate double moire interference in graphene encapsulated by hexagonal boron nitride

Nicolas Leconte,Jeil Jung

DOI: https://doi.org/10.48550/arXiv.2001.00096

2020-01-01

Abstract:Interference of double moire patterns of graphene (G) encapsulated by hexagonal boron nitride (BN) can alter the electronic structure features near the primary/secondary Dirac points and the electron-hole symmetry introduced by a single G/BN moire pattern depending on the relative stacking arrangements of the top/bottom BN layers. We show that strong interference effects are found in nearly aligned BN/G/BN and BN/G/NB and obtain the evolution of the associated density of states as a function of moire superlattice twist angles. For equal moire periods and commensurate patterns with $\Delta \phi = 0^{\circ}$ modulo $60^{\circ}$ angle differences the patterns can add up constructively leading to large pseudogaps of about $\sim 0.5$ eV on the hole side or cancel out destructively depending on their relative sliding, e.g. partially recovering electron-hole symmetry. The electronic structure of moire quasicrystals for $\Delta \phi =30^{\circ}$ differences reveal double moire features in the density of states with almost isolated van Hove singularities where we can expect strong correlations.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how the moire pattern interference affects the electronic structure when graphene (G) is encapsulated by hexagonal boron nitride (BN). Specifically, the research focuses on how this interference effect changes the characteristics of the electronic structure near the primary and secondary Dirac points when the top and bottom BN layers are almost aligned with the graphene layer, as well as the electron - hole symmetry introduced by a single G/BN moire pattern. By analyzing the top and bottom BN layers under different relative stacking arrangements, the paper shows a strong interference effect and explores the trend of these effects with the moire superlattice twist angle.

The paper mentions that for equal moire periods and eutectic patterns (i.e., the angular difference \(\Delta\phi = 0^\circ\) modulo 60 degrees), the patterns can be constructively superimposed, resulting in a large pseudo - energy gap of approximately 0.5 eV on the hole side, or destructively cancelled according to their relative sliding, partially restoring the electron - hole symmetry. In addition, for the moire quasicrystal with \(\Delta\phi = 30^\circ\), the double - moire features are revealed in the density of states, where the almost isolated van Hove singularities indicate the possible existence of strong correlations.

Overall, the paper aims to explore and understand the specific effects of the double - moire pattern interference on the electronic structure in the system where graphene is encapsulated by hexagonal boron nitride, especially how these effects change the electronic properties of the system under different twist angles and sliding vector conditions. This not only helps to deeply understand the moire effect in two - dimensional materials, but also provides a theoretical basis for designing new artificial materials with specific electronic characteristics.