Abstract:Moire bands separated by the primary and secondary gaps emerge in the superlattices of monolayer (MLG) and bilayer graphene (BLG) aligned with the hexagonal boron nitride (BN). We study the tuning of the electronic and transport properties of such moire superlattices through the periodic electrostatic potentials produced by the one-dimensional (1D) or two-dimensional (2D) patterned gating structure in the devices. The electrostatic potentials in graphene are produced by the spatially varying particle and hole doping due to the local quantum capacitance effect and can be modulated by the voltage (V-TG) of the top patterned gating structure and that (V-BG) of the uniform bottom gate. For the 1D devices of MLG/BN and BLG/BN, different sets of Fabry-Perot interference like resistance patterns as a function of V-TG and VBG can be observed when the Fermi level is shifted from the charge neutrality point (CNP) to the secondary gaps in MLG/BN and BLG/BN, and the overlapping regions of the patterns exhibit the highest resistance. The electronic states in these various regions of the resistance map show different moire-band hybridization and spatial distribution. The secondary resistance patterns around the secondary gaps move away from the primary one with increasing twist angle (theta) between graphene and BN and their detailed patterns also depend on the orientation of the 1D potential with respect to that of the superlattice. The 2D periodic potentials can further split the subbands between CNP and the secondary gaps, depending on the commensurability of the moire superlattice and the 2D potentials, and additional resistance peaks appear as a function of the gate voltages. The calculated resistance map for BLG/BN at theta similar to 1 degrees is roughly consistent with recent experimental observations.

Moiré Effects in Graphene-Hbn Heterostructures

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Tuning Band Gap and Work Function Modulations in Monolayer hBN/Cu(111) Heterostructures with Moiré Patterns.

Moiré superlattice effects in graphene/boron-nitride van der Waals heterostructures

Commensurate and Incommensurate Double Moiré Interference in Twisted Trilayer Graphene

Emergence of moiré superlattice potential in graphene by twisted-hBN layers

Moire superlattice effects in graphene/boron-nitride van der Waals heterostructures

Moiré Patterns as a Probe of Interplanar Interactions for Graphene on h-BN

Klein tunneling degradation and enhanced Fabry-Pérot interference in graphene/h-BN moiré-superlattice devices

Tunable Interband Transitions in Twisted H-Bn/graphene Heterostructures

Imaging Self-aligned Moiré Crystals and Quasicrystals in Magic-angle Bilayer Graphene on hBN Heterostructures

Tuning of the Moiré Bands in Graphene on Hexagonal Boron Nitride by the Periodic Electrostatic Gating

Effect of Moiré Superlattice Reconstruction in the Electronic Excitation Spectrum of Graphene-Metal Heterostructures

Deterministic fabrication of graphene hexagonal boron nitride moiré superlattices

Commensurate and incommensurate double moire interference in graphene encapsulated by hexagonal boron nitride

Untwisting Moiré Physics: Almost Ideal Bands and Fractional Chern Insulators in Periodically Strained Monolayer Graphene

Developing Graphene‐Based Moiré Heterostructures for Twistronics

Tunable Interband Transitions in Twisted Heterostructures

Electronic properties of twisted bilayer graphene suspended and encapsulated with hexagonal boron nitride