Moiré Band Topology in Twisted Bilayer Graphene
Chao Ma,Qiyue Wang,Scott Mills,Xiaolong Chen,Bingchen Deng,Shaofan Yuan,Cheng Li,Kenji Watanabe,Takashi Taniguchi,Xu Du,Fan Zhang,Fengnian Xia
DOI: https://doi.org/10.1021/acs.nanolett.0c02131
IF: 10.8
2020-07-21
Nano Letters
Abstract:Recently twisted bilayer graphene (t-BLG) has emerged as a strongly correlated physical platform. Besides the apparent significance of band flatness, band topology may be another critical element in t-BLG and yet receives much less attention. Here we report the compelling evidence for nontrivial noninteracting Moiré band topology in t-BLG through a systematic nonlocal transport study and a <i>K</i>-theory examination. The nontrivial topology manifests itself as two pronounced nonlocal responses in the electron and hole superlattice gaps. We show that the nonlocal responses are robust to the twist angle and edge termination, exhibiting a universal scaling law. We elucidate that, although Berry curvature is symmetry-trivialized, two nontrivial <i>Z</i><sub>2</sub> invariants characterize the Moiré Dirac bands, validating the topological origin of the observed nonlocal responses. Our findings not only provide a new perspective for understanding the strongly correlated t-BLG but also suggest a potential strategy to achieve topological metamaterials from trivial vdW materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c02131?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c02131</a>.Supplementary transport data for local and nonlocal resistances in device D1 (1.68°); estimation of experimental errors in the nonlocal measurements; supplementary transport data for local and nonlocal resistances in device D2 (0.75°); transport data for local and nonlocal resistances in device D3 (0.42°); Moiré Brillouin zone and Wilson loop spectral flow for the two Moiré Dirac bands; Moiré band structures and DOS of t-BLG; displacement field dependence of local and nonlocal resistances; the impact of twist-angle inhomogeneity on nonlocal responses; magnetic field dependence of <i>R</i><sub>NL</sub> in device D10; additional local <i>R</i><sub>L</sub> and nonlocal resistance <i>R</i><sub>NL</sub> measurements at 80 K for device D13–17; experimental details of all devices presented in this work (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c02131/suppl_file/nl0c02131_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology