On the Bulk Photovoltaic Effect in the Characterization of Strained Germanium Microstructures
Ignatii Zaitsev,Davide Spirito,Jacopo Frigerio,Carlos Alvarado Chavarin,Anke Lüdge,Wolfgang Lüdge,Raffaele Giani,Michele Virgilio,Costanza Lucia Manganelli
DOI: https://doi.org/10.1002/pssr.202400220
2024-09-19
physica status solidi (RRL) - Rapid Research Letters
Abstract:This study explores a new, cost‐effective, compact, and non‐destructive method for characterizing non‐uniform strain fields and material properties in semiconductors using the bulk photovoltage effect. Combining Raman spectroscopy, finite element method calculations, and lateral photovoltage scanning experiments on the benchmark structures of silicon nitride stripes deposited on a germanium substrate, this approach provides insights into strain and transport properties' analysis. Strain engineering serves as an effective method for optimizing electronic and optical properties in semiconductor devices, with applications including the enhancement of optical emission in Ge and GeSn‐based devices, improvement of carrier mobility, and second harmonic generation in silicon photonics structures. Current methods for deformation characterization in semiconductors, such as X‐ray diffraction and Raman spectroscopy, often require bulky and expensive setups and are limited in vertical resolution. Consequently, techniques capable of measuring lattice strain while overcoming these drawbacks are highly desirable. This study proposes a proof of concept for a cost‐effective, compact, fast, and non‐destructive approach to probe non‐uniform strain fields and additional material properties by exploiting the bulk photovoltage effect. The method is benchmarked with an array of silicon nitride stripes deposited under varying pressure conditions on a germanium substrate. Initially, their surface strains are verified through Raman spectroscopy. The deformations are replicated in a finite element method platform by integrating mechanical simulations with deformation potential theory, thereby estimating the band edge energy landscape. Finally, the study discusses the theoretical behavior of the photovoltage signal, considering semiconductor properties, defects, doping, and deformation. The findings offer insights into the development of advanced techniques for strain and transport analysis in semiconductor materials.
physics, condensed matter, applied,materials science, multidisciplinary