Quantum dot-modified CsPbIBr2 perovskite absorber for efficient and stable photovoltaics

Yuxiao Guo,Xingtian Yin,Meidan Que,Jingzhou Zhang,Sen Wen,Dan Liu,Haixia Xie,Wenxiu Que

DOI: https://doi.org/10.1016/j.orgel.2020.105917

IF: 3.868

2020-11-01

Organic Electronics

Abstract:<p>Halide CsPbX₃ perovskites, superior photovoltaic materials with great thermal endurance, are of tremendous passion for tunable bandgaps and gratifying applications in colored-light-emitting diodes (LEDs) and tandem solar cells (TSCs). Nevertheless, the inferior moisture tolerance for cubic (α)-phase perovskite is still a huge obstacle for sustaining output of CsPbX₃-based perovskite solar cells (PSCs) under ambient pressure. For the representative CsPbIBr₂ perovskite, the solution-derived film, enduring the disappointing quality for the existing voids and pinholes, severely limits its device performance and long-time outputs. Herein, we introduced a perovskite surface modification method, overspreading anion-exchanged CsPbIBr₂ alloy quantum dots (QDs) over the bulk materials, to protect interior CsPbIBr₂ perovskites by moisture isolation. As a reward, this attempt can help the thin perovskite films and associated devices against the ambient environments to achieve a superior stability, as well as a gratifying efficiency improvement of ∼12% (8.16% <em>vs.</em> 7.31%) due to the defect passivation. Particularly, the QDs-modified perovskite films can still remain ∼78% absorption after a two-stage storage of low humidity (∼36%) and high humidity (∼80%), comparing with a complete phase transformation (α → β) of the conventional films.</p>

materials science, multidisciplinary,physics, applied