Abstract:By utilizing embedded micro‐heaters for post‐deposition annealing, metal oxide grain size and gas responses of adjacent sensors in the same substrate can be controlled without further fabrication steps. The proposed dual FET‐type gas sensors with on‐chip annealing can directly determine the gas concentration in a mixed gas environment, introducing a new approach for a real‐time energy‐efficient gas sensing system. The demand for gas sensing systems that enable fast and precise gas recognition is growing rapidly. However, substantial challenges arise from the complex fabrication process of sensor arrays, time‐consuming data transmission to an external processor, and high energy consumption in multi‐stage data processing. In this study, a gas sensing system using on‐chip annealing for fast and power‐efficient gas detection is proposed. By utilizing a micro‐heater embedded in the gas sensor, the sensing material of adjacent sensors in the same substrate can be easily varied without further fabrication steps. The response to oxidizing gas is constrained in metal oxide (MOX) sensing material with small grain sizes, as the depletion width of grain cannot extend beyond the grain size during the gas reaction. On the other hand, the response to reducing gases and humidity, which decrease the depletion width, is less affected by grain sizes. A readout circuit integrating a differential amplifier and dual FET‐type gas sensors effectively emphasizes the response to oxidizing gases by canceling the response to reducing gases and humidity. The selective on‐chip annealing method is applicable to various MOX sensing materials, demonstrating its potential for application in commercial fields due to its simplicity and expandability.

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