Abstract:Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has recently emerged as a new candidate for optical control of single spin qubit with significant material benefits over nitrogen vacancies in diamond. In this work, we present a study of the coherence of silicon vacancies generated via proton irradiation as a function of implantation depth. We show clear evidence of dephasing interactions between the silicon vacancies and the spin environment of the bulk crystal. This result will inform further routes toward fabrication of scalable silicon carbide devices and studies of spin interactions of in high-density ensembles of defects.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study how the spin coherence changes with the implantation depth in high - density silicon vacancy (silicon vacancies) defects. Specifically, the authors focus on the spin coherence of silicon vacancy defects generated in 4H - SiC (silicon carbide) by proton irradiation and explore the de - phasing interaction between these defects and the spin environment in the crystal bulk. ### Research Background 1. **Quantum Information and Sensing Applications**: Point defects in wide - band - gap semiconductors provide a way for applications in solid - state optoelectronic devices such as quantum information processing, quantum measurement, and single - photon emitters. In particular, the optical control of silicon vacancies (VSi) in silicon carbide shows significant advantages, making it an alternative candidate to the nitrogen - vacancy (NV) center in diamond. 2. **High - Density Defect Aggregates**: Although a great deal of research has been done on the coherence of individual SiC defects, relatively little research has been done in high - density defect aggregates. The study of high - density defect aggregates is very important for understanding super - radiative coupling and other collective phenomena. ### Main Problems - **Relationship between Spin Coherence and Depth**: The paper focuses on how the spin coherence time of silicon vacancies changes with the implantation depth. The results show that as the depth increases, the spin coherence time is significantly shortened, which may be due to the enhanced non - uniform de - phasing effect caused by the increase in defect density. - **Influence of Defect Density**: Research shows that proton irradiation can generate high - density defect aggregates, and the spin coherence time in these aggregates is strongly influenced by the defect density. In particular, near the proton deposition layer, the defect density increases, resulting in a sharp drop in the spin coherence time. ### Formula Representation When discussing the spin coherence time and the de - phasing mechanism, the following formulas are involved: - Definition of spin coherence time \(T_2\): \[ T_2=\frac{1}{\gamma}\ln\left(\frac{I_0}{I(t)}\right) \] where \(I_0\) is the initial photoluminescence intensity, \(I(t)\) is the photoluminescence intensity at a delay time of \(t\), and \(\gamma\) is the de - phasing rate. - Non - uniform de - phasing time \(T_2^*\): \[ T_2^*=\frac{1}{\Delta\omega} \] where \(\Delta\omega\) is the broadening of the spin frequency. ### Conclusion The paper shows that proton irradiation is an effective method for generating high - density silicon vacancy defects, and the spin coherence time of these defects can be adjusted by controlling the irradiation depth. This is of great significance for designing high - density interacting dipole aggregates and realizing chip - level ultra - stable lasers and detectors. ### Future Work Future work will focus on identifying the specific de - phasing mechanisms between defects, establishing the relationship between irradiation energy and defect density, and ultimately achieving super - radiative emission from dense SiC defect aggregates.

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