D. E. Tsurikov,A. M. Yafyasov
Abstract:Searching of optimal parameters of nanoelectronic devices is a primal problem in their modeling. We solve this problem on example of the electron ballistic switch in quantum network model. For this purpose, we use a computing scheme in which closed channels are taking into account. It allows calculating correctly a scattering matrix of the switch and, consequently, the electric currents flowing through it. Without losing generality, we consider model of two-junction switch at room temperature. Its character is localization of the controlling electric field in the domain before branching. We optimize switch parameters using a genetic algorithm. At the expense of it for InP, GaAs and GaSb switch efficiency reached 77-78%. It is established that, for the considered materials, volt-ampere characteristics of the device are close to the linear ones at bias voltages 0-50 mV. It allowed describing with a good accuracy electron transport in the switch by means of $3\times 3$ matrix of approximate conductivity. Finally, based on the performed parameters optimization of two-junction switch we formulate the general scheme of modeling nanoelectronic devices in the framework of quantum network formalism.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to optimize the parameters of the double - junction ballistic switch based on the quantum network model in order to improve its efficiency at room temperature. Specifically, by considering the influence of the closed channel, the researchers calculate the scattering matrix and optimize the switch parameters, thereby accurately describing the current flowing through the switch. The following are the main contents and methods of the paper:
1. **Problem Background**:
- Semiconductor nanoelectronics is the driving force for the development of modern computer devices. In particular, devices based on two - dimensional electron gas are very interesting because they have quantum functions, are not limited by temperature, can reduce power consumption, and are suitable for use in computer logic elements.
- Finding the optimal parameters of these switches is very important, especially when considering the characteristics of electron transport in nano - devices, such as multi - channel scattering, tunneling effect, and quantum statistics.
2. **Research Objectives**:
- Optimize the parameters of the double - junction ballistic switch to achieve the highest efficiency at room temperature.
- Use the genetic algorithm to optimize the switch efficiency of InP, GaAs, and GaSb materials to reach 77 - 78%.
- Describe the electron transport characteristics and use a 3×3 approximate conductivity matrix to accurately describe the transport properties of the switch.
3. **Research Methods**:
- **Structure and Efficiency**: Consider a double - junction ballistic switch based on two - dimensional electron gas, where the control electric field acts on the area before the Y - shaped branch. Define the switch efficiency as the relative bias of the current in one of the output branches.
\[
\delta_{\text{sw}}:=\frac{J_3}{J_2 + J_3}
\]
- **Parameter Optimization**: Divide the variable parameters into fixed and variable categories, and optimize the variable parameters within a given range to achieve the desired transport characteristics.
- **Calculation Scheme**: Use the calculation scheme in the quantum network model, consider the influence of the closed channel on the transport characteristics, and ensure the correct calculation of the scattering matrix and current.
4. **Results and Discussion**:
- Through optimization, for the three materials of InP, GaAs, and GaSb, the switch efficiency reaches 77 - 78%.
- Draw the efficiency diagrams under different connection branch lengths and electric field intensities, observe multiple local extrema, and verify the necessity of using the genetic algorithm for optimization.
- It is found that the volt - ampere characteristics are nearly linear, allowing the use of a 3×3 approximate conductivity matrix to describe electron transport.
5. **Conclusion**:
- By optimizing the parameters of the double - junction ballistic switch, the efficiency at room temperature has been successfully improved.
- A general scheme for modeling nano - electronic devices based on quantum network formalism is proposed, including structure selection, parameter determination, optimization, and result interpretation.
In summary, this paper aims to improve the efficiency of the double - junction ballistic switch at room temperature by optimizing its parameters and proposes an effective modeling method to describe the transport characteristics of nano - electronic devices.