Abstract:A derivation of a tight-binding model from Schrödinger formalism for various topologies of position-based semiconductor qubits is presented in the case of static and time-dependent electric fields. The simplistic tight-binding model enables the description of single-electron devices at a large integration scale. The case of two electrostatically Wannier qubits (also known as position-based qubits) in a Schrödinger model is presented with omission of spin degrees of freedom. The concept of programmable quantum matter can be implemented in the chain of coupled semiconductor quantum dots. Highly integrated and developed cryogenic CMOS nanostructures can be mapped to coupled quantum dots, the connectivity of which can be controlled by a voltage applied across the transistor gates as well as using an external magnetic field. Using the anti-correlation principle arising from the Coulomb repulsion interaction between electrons, one can implement classical and quantum inverters (Classical/Quantum Swap Gate) and many other logical gates. The anti-correlation will be weakened due to the fact that the quantumness of the physical process brings about the coexistence of correlation and anti-correlation at the same time. One of the central results presented in this work relies on the appearance of dissipation-like processes and effective potential renormalization building effective barriers in both semiconductors and in superconductors between not bended nanowire regions both in classical and in quantum regimes. The presence of non-straight wire regions is also expressed by the geometrical dissipative quantum Aharonov–Bohm effect in superconductors/semiconductors when one obtains a complex value vector potential-like field. The existence of a Coulomb interaction provides a base for the physical description of an electrostatic Q-Swap gate with any topology using open-loop nanowires, with programmable functionality. We observe strong localization of the wavepacket due to nanowire bending. Therefore, it is not always necessary to build a barrier between two nanowires to obtain two quantum dot systems. On the other hand, the results can be mapped to the problem of an electron in curved space, so they can be expressed with a programmable position-dependent metric embedded in Schrödinger's equation. The semiconductor quantum dot system is capable of mimicking curved space, providing a bridge between fundamental and applied science in the implementation of single-electron devices.

Analytical view on tunnable electrostatic quantum swap gate in tight-binding model

Analytic view on N body interaction in electrostatic quantum gates and decoherence effects in tight-binding model

Electrostatically Interacting Wannier Qubits in Curved Space

Description of interface between semiconductor electrostatic qubit and Josephson junction in tight binding model

Theory Of Electronic Properties And Quantum Spin Blockade In A Gated Linear Triple Quantum Dot With One Electron Spin Each

Correlated Electron Transport Through Parallel Double-Quantum-dot

Spatial entanglement in two-dimensional artificial atoms

Electron States in Parallel Double Quantum Dots with a Tunable Inter-Dot Coupling

Quantum computation in semiconductor quantum dots of electron-spin asymmetric anisotropic exchange

Ab initio modelling of quantum dot qubits: Coupling, gate dynamics and robustness versus charge noise

Swapping Kondo Resonances in Coupled Double Quantum Dots

Analytical view on non-invasive measurement of moving charge by position-based semiconductor qubit(s)

Theory of charge stability diagrams in coupled quantum dot qubits

Diatomic molecule as a quantum entanglement switch

Quantum Gates Based on Two Strongly Coupled Harmonic Oscillators in Thermal Non-Equilibrium Conditions

Double quantum dot turnstile as an electron spin entangler

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Simulation Methodology for Electron Transfer in CMOS Quantum Dots

Electron transport through a quantum interferometer with side-coupled quantum dots: Green's function approach

Entangling spin and charge degrees of freedom in semiconductor quantum dots

Entanglement swapping in critical quantum spin chains