Abstract:Van der Waals-coupled two-dimensional (2D) heterostructures have attracted great attention recently due to their high potential in the next-generation photodetectors and solar cells. The understanding of charge-transfer process between adjacent atomic layers is the key to design optimal devices as it directly determines the fundamental response speed and photon-electron conversion efficiency. However, general belief and theoretical studies have shown that the charge transfer behavior depends sensitively on interlayer configurations, which is difficult to control accurately, bringing great uncertainties in device designing. Here we investigate the ultrafast dynamics of interlayer charge transfer in a prototype heterostructure, the MoS2/WS2 bilayer with various stacking configurations, by optical two-color ultrafast pump-probe spectroscopy. Surprisingly, we found that the charge transfer is robust against varying interlayer twist angles and interlayer coupling strength, in time scale of ∼90 fs. Our observation, together with atomic-resolved transmission electron characterization and time-dependent density functional theory simulations, reveals that the robust ultrafast charge transfer is attributed to the heterogeneous interlayer stretching/sliding, which provides additional channels for efficient charge transfer previously unknown. Our results elucidate the origin of transfer rate robustness against interlayer stacking configurations in optical devices based on 2D heterostructures, facilitating their applications in ultrafast and high-efficient optoelectronic and photovoltaic devices in the near future.

Stacking and interlayer electron transport in MoS2

Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Stacking Stability of MoS 2 Bilayer: an Ab Initio Study

Interlayer-Incorporation of MoS<sub>2</sub> (TM-MoS<sub>2</sub>) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Interlayer Coupling Limit in Artificially Stacked MoS2 Homojunctions

Ultrafast dynamics of charge transfer in CVD grown MoS2-graphene heterostructure

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS 2 -Interlayer-mos 2 Tunneling Junctions

Unusual Stacking Variations in Liquid-Phase Exfoliated Transition Metal Dichalcogenides

Interlayer-State-Coupling Dependent Ultrafast Charge Transfer in MoS2/WS2 Bilayers.

Field effect in stacked van der Waals heterostructures: Stacking sequence matters

Stacking change in MoS$_{2}$ bilayers induced by interstitial Mo impurities

Emergent layer stacking arrangements in c-axis confined MoTe2

σ–σ Stacked supramolecular junctions

Interlayer Exciton Transport in MoSe 2 /WSe 2 Heterostructures

Optically Probing the Asymmetric Interlayer Coupling in Rhombohedral-Stacked MoS2 Bilayer

Enhancing the Carrier Transport in Monolayer MoS2 Through Interlayer Coupling with 2D Covalent Organic Frameworks

Stacking monolayers at will: A scalable device optimization strategy for two-dimensional semiconductors

Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

Functional Group Induced Transformations in Stacking and Electron Structure in Mo2CTx/NiS Heterostructures