Modeling of Organic Metal-Insulator-Semiconductor Capacitor

Prashanth Kumar Manda,Logesh Karunakaran,Sandeep Thirumala,Anjan Chakravorty,Soumya Dutta

DOI: https://doi.org/10.1109/TED.2019.2927535

2018-10-27

Abstract:In this paper, we demonstrate the principle of operation of a metal-insulator-semiconductor (MIS) capacitor based on undoped organic semiconductor. In spite of low charge concentration within the semiconductor, this device exhibits a capacitance variation with respect to applied gate voltage $V_g$, resembling the capacitance-voltage $C$-$V$ characteristics of a traditional doped semiconductor based MIS capacitor. A physics based model is developed to derive charge concentration, surface potential $\psi_s$ and the capacitance of organic MIS capacitor. The model is validated with TCAD simulation results and is further verified with experimental results obtained from fabricated organic MIS capacitor consisting of poly(4-vinylphenol) and poly(3-hexylthiophene-2,5-diyl) as insulator and semiconductor, respectively.

Mesoscale and Nanoscale Physics,Soft Condensed Matter

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop a physics - based model to describe the capacitance - voltage (C - V) characteristics of metal - insulator - semiconductor (MIS) capacitors based on undoped organic semiconductors. Specifically, the Mott - Schottky analysis, which is traditionally used to explain the C - V characteristics of MIS capacitors based on doped semiconductors, leads to incorrect results in the case of undoped semiconductors. Therefore, there is currently a lack of a physical model that can comprehensively explain the C - V characteristics of MIS capacitors based on undoped organic semiconductors.

### Main problems:
1. **Modeling of C - V characteristics of MIS capacitors with undoped organic semiconductors**: Existing models cannot accurately describe the C - V characteristics of MIS capacitors with undoped organic semiconductors, especially in the moderate accumulation region.
2. **Verification and experimental support**: It is necessary to verify the proposed model through simulation and experimental data to ensure its accuracy and applicability.

### Solutions:
The author has developed a physics - based analytical model that takes into account the mobile charge carriers injected through the metal - semiconductor Schottky contact and their accumulation under the action of the gate voltage. This model covers the C - V characteristics in the entire voltage range and has been verified in the following ways:
- **TCAD simulation**: Use the Sentaurus TCAD simulation tool to verify the validity of the model.
- **Experimental verification**: Organic MIS capacitors based on poly(3 - hexylthiophene - 2,5 - diyl) (P3HT) and poly(4 - vinylphenol) (PVP) were prepared and tested experimentally to further verify the accuracy of the model.

### Key formulas:
1. **Minimum capacitance \(C_{\text{min}}\)**:
\[
C_{\text{min}}=\frac{C_iC_{sc}}{C_i + C_{sc}}
\]
where,
\[
C_i=\frac{\varepsilon_i\varepsilon_0}{t_i},\quad C_{sc}=\frac{\varepsilon_s\varepsilon_0}{t_s}
\]
\(\varepsilon_0\) is the permittivity of free space, \(\varepsilon_i\) and \(\varepsilon_s\) are the relative permittivities of the insulating layer and the semiconductor respectively, and \(t_i\) and \(t_s\) are the thicknesses of the insulating layer and the semiconductor respectively.

2. **Surface potential \(\psi_s\)**:
\[
\psi_s = 2V_t\log\left(\frac{\sinh(k[\pm x_1 - t_s])}{\sinh(k[\pm x_1])}\right)
\]

3. **Accumulated charge \(Q_{sp}\)**:
\[
Q_{sp}(\psi_s)=Q_0\left(\sqrt{\exp\left(-\frac{\psi_s}{V_t}\right)}+(kx_d)^2-\sqrt{1+(kx_d)^2}\right)
\]
where,
\[
Q_0=\sqrt{\frac{2q\varepsilon_r\varepsilon_0V_tp_d}{q}}
\]

Through these formulas and the model, the author has successfully explained the C - V characteristics of MIS capacitors with undoped organic semiconductors and verified the differences from traditional MIS capacitors with doped semiconductors.