Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

A technology agnostic RRAM characterisation methodology protocol

Modeling and Benchmarking Computing-in-Memory for Design Space Exploration.

Hybrid CMOS/Memristor Circuit Design Methodology

Automated Testing Algorithm for the Improvement of 1T1R ReRAM Endurance

An Analytical Approach for Memristive Nanoarchitectures

Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors

A flexible and fast digital twin for RRAM systems applied for training resilient neural networks

Modeling-Based Design of Memristive Devices for Brain-Inspired Computing

Research Progress on Memristor: From Synapses to Computing Systems

Variation-aware, Reliability-Emphasized Design and Optimization of RRAM Using SPICE Model

A Compact Model of Analog RRAM With Device and Array Nonideal Effects for Neuromorphic Systems

Resistive Random Access Memory for Future Information Processing System.

System and Technology Co-optimization for RRAM Based Computation-in-memory Chip

Architectural Exploration of Application-Specific Resonant SRAM Compute-in-Memory (rCiM)

A Compact Model for Interface-Type Self-Rectifying Resistive Memory With Experiment Verification

Memristors for Memory and Computing Applications

Intelligent Computing with RRAM

Enhancing the Uniformity of a Memristor Using a Bilayer Dielectric Structure

Device and SPICE modeling of RRAM devices.

Solution-processed memristors: performance and reliability

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process