Abstract:Direct energy bandgap materials are crucial for the efficient optoelectronics devices. Therefore, the investigation of new direct gap materials is important. In the present work, two novel d-metal sulfides Sc2CdS4 and Y2CdS4 compounds are investigated by using the all electron full potential linearized augment plane wave method. Both the compounds show semiconducting nature and direct band gap with a value 1.886eV for Sc2CdS4 and 2.209eV for Y2CdS4, respectively. Strong hybridization between S-p and Sc/Y-d orbitals present among valence and conduction bands which is beneicial to electrical transport. Key optical parameters are calculated. The static value of the reflectivity R(0) and refractive index n(0) are vary inversely with the energy band gap (Eg). Both the compounds Sc2CdS4 and Y2CdS4 are P-type thermoelectric materials because the Hole carriers dominate the electronic transport. High optical and thermal response for all compounds reveals that they are potential candidates for optical and thermoelectric devices.

What problem does this paper attempt to address?

This paper aims to explore the properties of two new d - metal sulfide compounds, Sc₂CdS₄ and Y₂CdS₄. Specifically, the researchers conducted detailed studies on the structural, electronic, and optical properties of these two compounds through the first - principles calculation method. These studies mainly focused on the following aspects: 1. **Structural characteristics**: The crystal structures of Sc₂CdS₄ and Y₂CdS₄ were studied, and their lattice parameters, bond lengths, and volume - optimized structural parameters were determined. The results show that both compounds have a cubic structure with a space group of Fd3̅m. As the monovalent cation changes from Sc to Y, the lattice constant, unit cell volume, and bond length all increase. 2. **Electronic characteristics**: - **Band structure**: The electronic band structures of these two compounds were calculated, and it was found that they are both semiconductor materials and have a direct band gap. The band gap of Sc₂CdS₄ is 1.886 eV, while that of Y₂CdS₄ is 2.209 eV. The increase in the band gap is due to the increase in the cation radius. - **Density of states**: The total density of states and the partial density of states were analyzed, revealing the contributions of the S - p orbit and the Sc/Y - d orbit in the valence band and the conduction band. In particular, near the Fermi level, the contribution of the S - p orbit is significant, while the contribution of the Sc/Y - d orbit is small. This strong hybridization is conducive to charge transport. 3. **Optical characteristics**: - **Dielectric function**: The real and imaginary parts of the dielectric function were calculated, and the polarizability and absorption ability of the materials at different photon energies were analyzed. The results show that these two compounds have a high absorption ability in the visible and ultraviolet regions and are suitable as solar cell materials. - **Refractive index and reflectivity**: The refractive index and reflectivity were calculated, and it was found that these materials have a large refractive index in the visible region and exhibit metallic properties in the high - energy region. - **Extinction coefficient and optical conductivity**: The extinction coefficient and optical conductivity were analyzed, further verifying the high absorption ability of the materials in the ultraviolet region and their potential applications in high - frequency devices. In summary, the main purpose of this paper is to comprehensively evaluate the performance of Sc₂CdS₄ and Y₂CdS₄ in terms of structural, electronic, and optical properties through theoretical calculations, in order to discover their potential application values in the fields of optoelectronic devices and thermoelectric materials.

First-principles calculations of Sc2CdS4 and Y2CdS4 compounds

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