Investigation of Charge Plasma based Nanowire Field Effect Transistor for Sub 5 nm

P. Naveen ChanderP. RajaS. Ashok kumarR. Gayathri1 Department of ECE,Sri Manakula Vinayagar Engineering College,Puducherry,India2 Department of ECE,Karpagam Academy of Higher Education,Coimbatore,IndiaP Naveen Chander is doing his BTechdegree in the stream of Department ofElectronics and Communication Engineering,Sri Manakula Vinayagar EngineeringCollege,Puducherry India. Hisresearch interests include nanoelectronics,microelectronics,simulation and modeling. E-mail: Raja received his PhD degree fromPondicherry University,India and masterof technology from Indian Instituteof Technology,Madras India. He iscurrently working as professor& headin the in the department of electronicsand communication engineering,SriManakula Vinayagar Engineering College,Puducherry,India. His research areas involve wireless communication,VLSI,and image processing. E-mail: rajashruthy@gmail.comS Ashok kumar received his PhD degreein electronics and communication engineeringfrom Kalasalingam University,India. He is currently working as an associateprofessor in the Department of Electronicsand Communication Engineering,Karpagam Academy of Higher Education,India. His research interests include nanoelectronics,microelectronics,simulation and modeling.R Gayathri received her ME degree inapplied electronics from SathyabamaUniversity,Chennai,India. She is currentlyworking as an assistant professorin the Department of Electronics andCommunication Engineering,Sri ManakulaVinayagar Engineering College,Puducherry,India. Her research interestsinclude signal and image processing,VLSI and spectralanalysis. E-mail: gayathridevee@gmail.com

DOI: https://doi.org/10.1080/03772063.2024.2309227

IF: 1.8768

2024-02-09

IETE Journal of Research

Abstract:In the proposed work, cylindrical Nanowire Field Effect Transistors (NWFETs) are created for sub-10 nm applications using the charge plasma (CP) principle. In the middle of the transistor, a gate is surrounded by an oxide layer and a channel layer. By enclosing the channel in an oxide layer and surrounding it with a distinctive metal layer with various work functions, the charge-plasma concept is introduced. A detailed discussion of device characteristics, such as electric potential and transfer qualities, are presented. For channel lengths of 35 and 10 nm, measurements of the threshold voltage, drain current, and I ON /I OFF ratio are analyzed. Sentaurus Technology Computer Aided Design (TCAD) is used to evaluate and analyze the device. TCAD simulations that incorporate the Lombardi mobility model, Shockley-Read-Hall (SRH) model, Density-Gradient model, and Auger recombination models make it easier to calculate tunneling and recombination. Interestingly, the CP-based NWFET produces twice as much output current as its traditional NWFET. Because of the Schottky junction's larger vertical field, significant improvements include the reduction of lateral coupling between the source and drain field lines, the stabilization of the I ON /I OFF ratio, an overall reduction in parasitic leakage, and improved scalability. This work extends to circuit implementation, featuring the development of an Inverter circuit. Performance assessments are conducted, and comparisons are drawn with varying channel lengths and widths, further substantiating the efficacy of the proposed structure.

telecommunications,engineering, electrical & electronic

What problem does this paper attempt to address?

Investigation of Charge Plasma based Nanowire Field Effect Transistor for Sub 5 nm

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Nanotube and Nanowire Transistors

Pentacene Field-Effect Transistors with Sub-10-nm Channel Lengths

A Compact Model of Silicon-Based Nanowire Field Effect Transistor for Circuit Simulation and Design

A Comprehensive Analysis of Nanosheet Field-Effect Transistor: Recent Advances and Comparative Study

A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications

Gate Electrostatic Controllability Enhancement in Nanotube Gate all Around Field Effect Transistor

Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance

Design and Performance Optimization of Dopingless Vertical Nanowire TFET Using Gate Stacking Technique

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

Sub-kT/q Switching in In2O3 Nanowire Negative Capacitance Field-Effect Transistors

Sub-5 Nm Gate-All-Around InP Nanowire Transistors Toward High-Performance Devices

Metal-Gated Junctionless Nanowire Transistors

Implementation of Gate-All-Around Gate-Engineered Charge Plasma Nanowire FET-Based Common Source Amplifier

Gate Engineered Silicon Nanowire FET with Coaxial Inner Gate for Enhanced Performance

Si Nanowire - Array Source Gated Transistors

Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices

Performance Projection of Vacuum Gate Dielectric Doping-Free Carbon Nanoribbon/Nanotube Field-Effect Transistors for Radiation-Immune Nanoelectronics

The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level