Spin-dependent photogalvanic effect in the photodetector device based on penta-PtN 2 monolayer

Xi Fu,Jian Lin,Guangyao Liang,Wenhu Liao,Xiaowu Li,Liming Li
DOI: https://doi.org/10.1016/j.ssc.2024.115751
IF: 1.934
2024-11-10
Solid State Communications
Abstract:As a nonlinear phenomenon, photogalvanic effect in low dimensional materials have attracted intensive attentions at recent years. In this paper, based on a typical two-dimensional pentagon material penta-PtN 2 monolayer, we built a photodetector device which including the vacancy and substitution-doping situations, and studied their spin photocurrents generated by the photogalvanic effect, respectively. It has been found that the spin photocurrents in these PtN 2 -PhoDets exhibited the relations cos(2 θ + θ 0 ) on the polarization angle, and different photon energies can affect these relations. Moreover, since the symmetry of PtN 2 -PhoDets decrease from C 2v to C s when introducing the vacancy and substitution-doping, the strength of spin photocurrents slightly enlarged showing the enhancement of PGE. Furthermore, there exhibited very high spin polarizations, which were close to the 100% full spin polarization at the Pt-Vacancy, Doping(N)-Pt and Doping(Pt)-N2 situations, and then pure spin current can form at these special situations. Additionally, the relative high extinction ratios show that the PtN 2 -PhoDets were high-sensitive. The findings indicated that the penta-PtN 2 monolayer was of considerable significances on the practical applications in low-energy power optoelectronic and spintronic devices.
physics, condensed matter
What problem does this paper attempt to address?