Robust photogalvanic effect in the armchair B2C4P2 photodetector by vacancy and substitution-doping

Xi Fu,Jian Lin,Wenhu Liao,Jiyuan Guo,Xiaowu Li
DOI: https://doi.org/10.1140/epjb/s10051-023-00632-w
2024-01-19
The European Physical Journal B
Abstract:In this study, we investigated the linear photogalvanic effect (PGE) phenomena in an armchair photodetector device based on the B 2 C 4 P 2 monolayer, which was predicted and studied in a previous work (J Phys Chem Lett 12:3436–3442, 2021). The produced photocurrents show a cosine relation with the incident angles, and the vacancies and substitution-doping can significantly enhance the photocurrents generated and form robust PGEs due to the incremental asymmetry in the B 2 C 4 P 2 photodetector. Additionally, the armchair B 2 C 4 P 2 photodetector possesses a very high extinction ratio corresponding to a more sensitive polarization detection. This work demonstrates that the B 2 C 4 P 2 monolayer can be used as the high-performance PGE-driven photodetector in low-energy-consumption optoelectronics devices.
physics, condensed matter
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